IPP65R310CFDA - описание и поиск аналогов

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 ipb65r310cfda ipp65r310cfda.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPx65R310CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPB65R310CFDA, IPP65R310CFDA D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) princi

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 ipa65r310cfd ipb65r310cfd ipi65r310cfd ipp65r310cfd ipw65r310cfd ipw65r310cfd ipb65r310cfd ipp65r310cfd ipa65r310cfd ipi65r310cfd.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R310CFD Data Sheet Rev. 2.3 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R310CFD , IPB65R310CFD , IPP65R310CFD IPA65R310CFD , IPI65R310CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage

 2.2. Size:245K  inchange semiconductor
 ipp65r310cfd.pdf 

isc N-Channel MOSFET Transistor IPP65R310CFD IIPP65R310CFD FEATURES Static drain-source on-resistance RDS(on) 0.31 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and r

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 ipp65r380e6.pdf 

MOSFET + =L9D - PA

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 ipd65r380c6 ipi65r380c6 ipb65r380c6 ipp65r380c6 ipa65r380c6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R380C6 Data Sheet Rev. 2.1, 2011-02-17 Rev. 2.2, 2013-07-31 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPD65R380C6, IPI65R380C6 IPB65R380C6, IPP65R380C6 IPA65R380C6 1 Description CoolMOS is a revolutionary technology for high voltage power MO

 7.3. Size:2157K  infineon
 ipp65r380c62.0.pdf 

MOSFET + =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R380C6 1 Descripti n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K

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 ipd65r380e6 ipp65r380e6 ipa65r380e6.pdf 

MOSFET + =L9D - PA

 7.5. Size:245K  inchange semiconductor
 ipp65r380e6.pdf 

isc N-Channel MOSFET Transistor IPP65R380E6 IIPP65R380E6 FEATURES Static drain-source on-resistance RDS(on) 0.38 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOL

 7.6. Size:245K  inchange semiconductor
 ipp65r380c6.pdf 

isc N-Channel MOSFET Transistor IPP65R380C6 IIPP65R380C6 FEATURES Static drain-source on-resistance RDS(on) 0.38 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOL