Справочник MOSFET. IPP65R190C7

 

IPP65R190C7 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPP65R190C7
   Маркировка: 65C7190
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 72 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 17 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для IPP65R190C7

 

 

IPP65R190C7 Datasheet (PDF)

 ..1. Size:1604K  infineon
 ipp65r190c7.pdf

IPP65R190C7 IPP65R190C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPP65R190C7Data SheetRev. 2.1FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPP65R190C7TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle and

 ..2. Size:245K  inchange semiconductor
 ipp65r190c7.pdf

IPP65R190C7 IPP65R190C7

isc N-Channel MOSFET Transistor IPP65R190C7IIPP65R190C7FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOSFEToffering better efficiency,red

 4.1. Size:2212K  infineon
 ipa65r190c6 ipb65r190c6 ipi65r190c6 ipp65r190c6 ipw65r190c6.pdf

IPP65R190C7 IPP65R190C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPx65R190C6 Data SheetRev. 2.0, 2011-05-09Final Industrial & Multimarket650V CoolMOS C6 Power Transistor IPA65R190C6, IPB65R190C6IPI65R190C6, IPP65R190C6IPW65R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

 4.2. Size:2192K  infineon
 ipw65r190cfda ipb65r190cfda ipp65r190cfda.pdf

IPP65R190C7 IPP65R190C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R190CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R190CFDA, IPB65R190CFDAIPP65R190CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the sup

 4.3. Size:2175K  infineon
 ipb65r190cfda ipp65r190cfda ipw65r190cfda.pdf

IPP65R190C7 IPP65R190C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R190CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R190CFDA, IPB65R190CFDAIPP65R190CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the sup

 4.4. Size:6482K  infineon
 ipa65r190cfd ipb65r190cfd ipi65r190cfd ipp65r190cfd ipw65r190cfd.pdf

IPP65R190C7 IPP65R190C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6/CFD 650V650V CoolMOS C6 CFD Power TransistorIPx65R190CFD Data Sheet Data SheetRev. 2.2FinalIndustrial & MultimarketIPW65R190CFD , IPB65R190CFD , IPP65R190CFDIPA65R190CFD , IPI65R190CFD650V CoolMOS C6 CFD Power TransistorTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology fo

 4.5. Size:245K  inchange semiconductor
 ipp65r190c6.pdf

IPP65R190C7 IPP65R190C7

isc N-Channel MOSFET Transistor IPP65R190C6IIPP65R190C6FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOL

 4.6. Size:245K  inchange semiconductor
 ipp65r190cfd.pdf

IPP65R190C7 IPP65R190C7

isc N-Channel MOSFET Transistor IPP65R190CFDIIPP65R190CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while offeringan extremely fast and r

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: CEF840A

 

 
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