IPP65R045C7 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IPP65R045C7
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 227 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 46 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 14 ns
Cossⓘ - Выходная емкость: 70 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
Тип корпуса: TO-220
Аналог (замена) для IPP65R045C7
IPP65R045C7 Datasheet (PDF)
ipp65r045c7.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPP65R045C7Data SheetRev. 2.1FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPP65R045C7TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle and
ipp65r045c7.pdf

isc N-Channel MOSFET Transistor IPP65R045C7IIPP65R045C7FEATURESStatic drain-source on-resistance:RDS(on) 0.045Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOSFEToffering better efficiency,re
ipp65r065c7.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPP65R065C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPP65R065C7TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle and
ipp65r074c6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPP65R074C6Data SheetRev. 2.1FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPP65R074C6TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpion
Другие MOSFET... IPP65R150CFD , IPP65R125C7 , IPP65R110CFDA , IPP65R110CFD , IPP65R099C6 , IPP65R095C7 , IPP65R074C6 , IPP65R065C7 , STP65NF06 , IPP60R600P6 , IPP60R380P6 , IPP60R330P6 , IPP60R280P6 , IPP60R230P6 , IPP60R1K4C6 , IPP60R190P6 , IPP60R180C7 .
History: 3SK77BL | FDD8876 | BSS84N3 | BF993
History: 3SK77BL | FDD8876 | BSS84N3 | BF993



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