IPP60R125P6 - описание и поиск аналогов

 ..1. Size:2729K  infineon
 ipa60r125p6 ipp60r125p6 ipw60r125p6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R125P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R125P6, IPP60R125P6, IPA60R125P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi

 ..2. Size:2788K  infineon
 ipw60r125p6 ipp60r125p6 ipa60r125p6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R125P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R125P6, IPP60R125P6, IPA60R125P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi

 ..3. Size:245K  inchange semiconductor
 ipp60r125p6.pdf 

isc N-Channel MOSFET Transistor IPP60R125P6 IIPP60R125P6 FEATURES Static drain-source on-resistance RDS(on) 0.125 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSO

 5.1. Size:571K  infineon
 ipp60r125cp.pdf 

IPP60R125CP C IMOSTM # A0 9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound PG TO220 7!"%

 5.2. Size:1257K  infineon
 ipa60r125c6 ipb60r125c6 ipp60r125c6 ipw60r125c6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superj

 5.3. Size:245K  inchange semiconductor
 ipp60r125cp.pdf 

isc N-Channel MOSFET Transistor IPP60R125CP IIPP60R125CP FEATURES Static drain-source on-resistance RDS(on) 0.125 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 )

 5.4. Size:275K  inchange semiconductor
 ipp60r125c6.pdf 

isc N-Channel MOSFET Transistor IPP60R125C6 IIPP60R125C6 FEATURES Static drain-source on-resistance RDS(on) 0.125 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of us