IPP040N06N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPP040N06N
Маркировка: 040N06N
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 107 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3.3 V
Максимально допустимый постоянный ток стока |Id|: 80 A
Максимальная температура канала (Tj): 175 °C
Время нарастания (tr): 16 ns
Выходная емкость (Cd): 670 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.004 Ohm
Тип корпуса: TO-220
Аналог (замена) для IPP040N06N
IPP040N06N Datasheet (PDF)
ipp040n06n.pdf
TypeIPP040N06NOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 4.0 mW Superior thermal resistanceID 80 A N-channelQOSS nC 44 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 38 Pb-free lead plating; RoHS compliant Hal
ipp040n06n.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP040N06NIIPP040N06NFEATURESStatic drain-source on-resistance:RDS(on) 4.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAX
ipb037n06n3g ipi040n06n3g ipp040n06n3g.pdf
Type IPB037N06N3 G IPI040N06N3 GIPP040N06N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 60 VDSR 3.7 for sync. rectification, drives and dc/dc SMPS mDS(on),max (SMD)I 90 A Excellent gate charge x R product (FOM) DDS(on)previous engineering Very low on-resistance RDS(on)sample codes: N-channel, normal level IPP04xN06NIPI04xN06N Ava
ipp040n06n3g.pdf
IPP040N06N3 GMOSFETTO-220-3OptiMOS3 Power-Transistor, 60 VtabFeatures for sync. rectification, drives and dc/dc SMPS Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level Avalanche rated Qualified according to JEDEC1) for target applications Pb-free plating; RoHS compliant Halogen-free accordi
ipp040n06n3.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP040N06N3IIPP040N06N3FEATURESStatic drain-source on-resistance:RDS(on) 3.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE M
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
