IPP040N06N. Аналоги и основные параметры

Наименование производителя: IPP040N06N

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 107 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 16 ns

Cossⓘ - Выходная емкость: 670 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm

Тип корпуса: TO-220

Аналог (замена) для IPP040N06N

- подборⓘ MOSFET транзистора по параметрам

 

IPP040N06N даташит

 ..1. Size:458K  infineon
ipp040n06n.pdfpdf_icon

IPP040N06N

Type IPP040N06N OptiMOSTM Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V 100% avalanche tested RDS(on),max 4.0 mW Superior thermal resistance ID 80 A N-channel QOSS nC 44 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 38 Pb-free lead plating; RoHS compliant Hal

 ..2. Size:246K  inchange semiconductor
ipp040n06n.pdfpdf_icon

IPP040N06N

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP040N06N IIPP040N06N FEATURES Static drain-source on-resistance RDS(on) 4.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAX

 0.1. Size:484K  infineon
ipb037n06n3g ipi040n06n3g ipp040n06n3g.pdfpdf_icon

IPP040N06N

Type IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V 60 V DS R 3.7 for sync. rectification, drives and dc/dc SMPS m DS(on),max (SMD) I 90 A Excellent gate charge x R product (FOM) D DS(on) previous engineering Very low on-resistance R DS(on) sample codes N-channel, normal level IPP04xN06N IPI04xN06N Ava

 0.2. Size:1653K  infineon
ipp040n06n3g.pdfpdf_icon

IPP040N06N

IPP040N06N3 G MOSFET TO-220-3 OptiMOS 3 Power-Transistor, 60 V tab Features for sync. rectification, drives and dc/dc SMPS Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level Avalanche rated Qualified according to JEDEC1) for target applications Pb-free plating; RoHS compliant Halogen-free accordi

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