IRFP443
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Наименование прибора: IRFP443
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 125
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 450
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 7
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 42
nC
trⓘ -
Время нарастания: 23
ns
Cossⓘ - Выходная емкость: 154
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.1
Ohm
Тип корпуса:
TO3P
IRFP443
Datasheet (PDF)
0.2. Size:237K inchange semiconductor
irfp443r.pdf isc N-Channel MOSFET Transistor IRFP443RFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.1(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies a
8.1. Size:864K international rectifier
irfp448.pdf PD - 94899IRFP448PbF Lead-Free12/18/03Document Number: 91229 www.vishay.com1IRFP448PbFDocument Number: 91229 www.vishay.com2IRFP448PbFDocument Number: 91229 www.vishay.com3IRFP448PbFDocument Number: 91229 www.vishay.com4IRFP448PbFDocument Number: 91229 www.vishay.com5IRFP448PbFDocument Number: 91229 www.vishay.com6IRFP448PbFTO-247AC Package O
8.2. Size:296K international rectifier
irfp4468pbf.pdf PD -97134IRFP4468PbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.0m:l Uninterruptible Power Supplyl High Speed Power Switching max. 2.6m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)290A cID (Package Limited)195A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRu
8.4. Size:373K international rectifier
auirfp4409.pdf AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology DVDSS 300V Low On-Resistance 175C Operating Temperature RDS(on) typ. 56mFast Switching G 69mmax Repetitive Avalanche Allowed up to Tjmax SLead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical
8.5. Size:283K international rectifier
irfp4410zpbf.pdf PD - 97309AIRFP4410ZPbFHEXFET Power MOSFETApplicationsVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 7.2m:l High Speed Power Switching max. 9.0m:l Hard Switched and High Frequency CircuitsID (Silicon Limited)97ABenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessl Fully Characterized Cap
8.6. Size:925K international rectifier
irfp440.pdf PD - 95198IRFP440PbF Lead-Free4/27/04Document Number: 91228 www.vishay.com1IRFP440PbFDocument Number: 91228 www.vishay.com2IRFP440PbFDocument Number: 91228 www.vishay.com3IRFP440PbFDocument Number: 91228 www.vishay.com4IRFP440PbFDocument Number: 91228 www.vishay.com5IRFP440PbFDocument Number: 91228 www.vishay.com6IRFP440PbFTO-247AC Package Ou
8.8. Size:932K samsung
irfp440a.pdf Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 0.85 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V
8.9. Size:1449K vishay
irfp440pbf.pdf IRFP440, SiHFP440Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.85 Isolated Central Mounting Hole RoHS*Qg (Max.) (nC) 63COMPLIANT Fast SwitchingQgs (nC) 11 Ease of ParallelingQgd (nC) 30 Simple Drive RequirementsConfiguration Single Lead (Pb
8.10. Size:1629K vishay
irfp448 sihfp448.pdf IRFP448, SiHFP448Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.60RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 84 Fast SwitchingQgs (nC) 8.4 Ease of ParallelingQgd (nC) 50 Simple Drive RequirementsConfiguration Single Compli
8.11. Size:1460K vishay
irfp440 sihfp440.pdf IRFP440, SiHFP440Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.85RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 11 Ease of ParallelingQgd (nC) 30 Simple Drive RequirementsConfiguration Single Complian
8.12. Size:1663K vishay
irfp448pbf.pdf IRFP448, SiHFP448Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.60RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 84 Fast SwitchingQgs (nC) 8.4 Ease of ParallelingQgd (nC) 50 Simple Drive RequirementsConfiguration Single Lead
8.13. Size:296K infineon
irfp4468pbf.pdf PD -97134IRFP4468PbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.0m:l Uninterruptible Power Supplyl High Speed Power Switching max. 2.6m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)290A cID (Package Limited)195A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRu
8.14. Size:1634K infineon
irfp448 sihfp448.pdf IRFP448, SiHFP448Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.60RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 84 Fast SwitchingQgs (nC) 8.4 Ease of ParallelingQgd (nC) 50 Simple Drive RequirementsConfiguration Single Compli
8.15. Size:476K infineon
auirfp4409.pdf AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology DVDSS 300V Low On-Resistance 175C Operating Temperature RDS(on) typ. 56mFast Switching G 69mmax Repetitive Avalanche Allowed up to Tjmax SLead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical
8.16. Size:564K cn evvo
irfp4468.pdf IRFP4468Thunder High Power ProductsSilicon N-Channel Power MOSFETFEATURESStatic drain-source on-resistance:RDS(on)2.6mEnhancement mode:Vth =2.0 to 4.0 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible
8.17. Size:244K inchange semiconductor
irfp4468.pdf INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP4468IIRFP4468FEATURESStatic drain-source on-resistance:RDS(on)2.6mEnhancement mode:Vth =2.0 to 4.0 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterr
8.18. Size:236K inchange semiconductor
irfp442r.pdf isc N-Channel MOSFET Transistor IRFP442RFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.1(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies a
8.19. Size:237K inchange semiconductor
irfp440a.pdf isc N-Channel MOSFET Transistor IRFP440AFEATURESDrain Current I = 8.5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplie
8.20. Size:243K inchange semiconductor
irfp4410z.pdf isc N-Channel MOSFET Transistor IRFP4410ZIIRFP4410ZFEATURESStatic drain-source on-resistance:RDS(on)9.0mEnhancement mode:Vth =2.0 to 4.0 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power Supply
8.21. Size:236K inchange semiconductor
irfp441r.pdf isc N-Channel MOSFET Transistor IRFP441RFEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies
8.22. Size:236K inchange semiconductor
irfp440r.pdf isc N-Channel MOSFET Transistor IRFP440RFEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies
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