IPD65R660CFDA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPD65R660CFDA
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 62.5 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 6 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 8 ns
Выходная емкость (Cd): 32 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.66 Ohm
Тип корпуса: TO-252
Аналог (замена) для IPD65R660CFDA
IPD65R660CFDA Datasheet (PDF)
ipd65r660cfda.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPD65R660CFDA Data SheetRev. 2.1FinalAutomotive650V CoolMOS CFDA Power TransistorIPD65R660CFDADPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered
ipw65r660cfd ipb65r660cfd ipi65r660cfd ipa65r660cfd ipp65r660cfd ipd65r660cfd.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R660CFDData SheetRev. 2.4FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R660CFD, IPB65R660CFD, IPP65R660CFDIPA65R660CFD, IPD65R660CFD, IPI65R660CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for hi
ipd65r660cfd.pdf
isc N-Channel MOSFET Transistor IPD65R660CFD,IIPD65R660CFDFEATURESStatic drain-source on-resistance:RDS(on)0.66Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
ipd65r600c6 ipi65r600c6 ipb65r600c6 ipp65r600c6 ipa65r600c6.pdf
MOSFET+ =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C61 Descriptin!GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J+ - 1$#2K
ipd65r600e6 ipp65r600e6 ipa65r600e6.pdf
MOSFET Metall Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOSTM E6 Power Transistor IPx65R600E6 Data Sheet Rev. 2.3, 2018-02-28 Power Management & Multimarket 650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 1 Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the supe
ipb65r600c6 ipa65r600c6 ipp65r600c6 ipd65r600c6 ipi65r600c6.pdf
MOSFET+ =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C61 Descriptin!GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J+ - 1$#2K
ipa65r650ce ipd65r650ce.pdf
IPA65R650CE, IPD65R650CEMOSFETTO-220 FP DPAK650V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighti
ipd65r600c6.pdf
MOSFET+ =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C61 Descriptin!GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J+ - 1$#2K
ipd65r600e6.pdf
isc N-Channel MOSFET Transistor IPD65R600E6,IIPD65R600E6FEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
ipd65r650ce.pdf
isc N-Channel MOSFET Transistor IPD65R650CE,IIPD65R650CEFEATURESStatic drain-source on-resistance:RDS(on)0.65Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
ipd65r600c6.pdf
isc N-Channel MOSFET Transistor IPD65R600C6,IIPD65R600C6FEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSSV
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
