IPD65R420CFD. Аналоги и основные параметры
Наименование производителя: IPD65R420CFD
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 83.3 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8.7 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 7 ns
Cossⓘ - Выходная емкость: 45 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.42 Ohm
Тип корпуса: TO-252
Аналог (замена) для IPD65R420CFD
- подборⓘ MOSFET транзистора по параметрам
IPD65R420CFD даташит
..1. Size:1304K infineon
ipd65r420cfd ipd65r420cfda.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPD65R420CFDA Data Sheet Rev. 2.1 Final Automotive 650V CoolMOS CFDA Power Transistor IPD65R420CFDA DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered
..2. Size:1675K infineon
ipw65r420cfd ipb65r420cfd ipp65r420cfd ipa65r420cfd ipd65r420cfd ipi65r420cfd.pdf 
MO Met l Oxi e emi n t iel e t n i t C lMO C D C lMO C D e n i t I x 4 C D D t eet e 4 Rev. 2.6 in l Power Management & Multimarket In ti l & M ltim ket C lMO C D e n i t I 4 C D I 4 C D I 4 C D I 4 C D I D 4 C D I I 4 C D O 47 D O 1 Descripti n C lMO i e l ti n te n l i lt e p e MO e i ne in t t e pej n ti n ) pin i
7.1. Size:1094K infineon
ipd65r400ce ips65r400ce.pdf 
IPD65R400CE, IPS65R400CE MOSFET DPAK IPAK SL 650V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE series combines the 1 3 experience of the leading SJ MOSFET supplier with high class innovation. The resulting de
7.2. Size:242K inchange semiconductor
ipd65r400ce.pdf 
isc N-Channel MOSFET Transistor IPD65R400CE,IIPD65R400CE FEATURES Static drain-source on-resistance RDS(on) 0.4 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
8.2. Size:1144K infineon
ipd65r950cfd.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPD65R950CFD Data Sheet Rev. 2.0 Rev. 2.1 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPD65R950CFD DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) prin
8.3. Size:919K infineon
ipd65r600e6 ipp65r600e6 ipa65r600e6.pdf 
MOSFET Metall Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOSTM E6 Power Transistor IPx65R600E6 Data Sheet Rev. 2.3, 2018-02-28 Power Management & Multimarket 650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 1 Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the supe
8.4. Size:1206K infineon
ipd65r250c6.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPD65R250C6 Data Sheet Rev. 2.1 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPD65R250C6 DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pionee
8.6. Size:1677K infineon
ipd65r225c7.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPD65R225C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPD65R225C7 DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and p
8.7. Size:1946K infineon
ipd65r380c6 ipi65r380c6 ipb65r380c6 ipp65r380c6 ipa65r380c6.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R380C6 Data Sheet Rev. 2.1, 2011-02-17 Rev. 2.2, 2013-07-31 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPD65R380C6, IPI65R380C6 IPB65R380C6, IPP65R380C6 IPA65R380C6 1 Description CoolMOS is a revolutionary technology for high voltage power MO
8.9. Size:963K infineon
ipd65r1k0ce.pdf 
IPD65R1K0CE MOSFET DPAK 650V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high
8.10. Size:1701K infineon
ipd65r250e6.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V 650V CoolMOS E6 Power Transistor IPD65R250E6 Data Sheet Rev. 2.2 Final Industrial & Multimarket 650V CoolMOS E6 Power Transistor IPD65R250E6 DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pi
8.11. Size:1158K infineon
ipa65r650ce ipd65r650ce.pdf 
IPA65R650CE, IPD65R650CE MOSFET TO-220 FP DPAK 650V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighti
8.12. Size:1830K infineon
ipd65r190c7.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPD65R190C7 Data Sheet Rev. 2.1 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPD65R190C7 DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and p
8.13. Size:1133K infineon
ipd65r1k4cfd.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPD65R1K4CFD Data Sheet Rev. 2.0 Rev. 2.1, 2013-07-31 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPD65R1K4CFD DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjuncti
8.14. Size:4455K infineon
ipw65r660cfd ipb65r660cfd ipi65r660cfd ipa65r660cfd ipp65r660cfd ipd65r660cfd.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R660CFD Data Sheet Rev. 2.4 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R660CFD, IPB65R660CFD, IPP65R660CFD IPA65R660CFD, IPD65R660CFD, IPI65R660CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for hi
8.15. Size:1385K infineon
ipd65r660cfda.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPD65R660CFDA Data Sheet Rev. 2.1 Final Automotive 650V CoolMOS CFDA Power Transistor IPD65R660CFDA DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered
8.18. Size:1734K infineon
ipd65r950c6.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPD65R950C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPD65R950C6 DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and
8.19. Size:2092K infineon
ipd65r600c6.pdf 
MOSFET + =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C6 1 Descripti n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K
8.20. Size:1905K infineon
ipd65r380c62.1.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R380C6 Data Sheet Rev. 2.1, 2011-02-17 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPD65R380C6, IPI65R380C6 IPB65R380C6, IPP65R380C6 IPA65R380C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accord
8.21. Size:1724K infineon
ipd65r1k4c6.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPD65R1K4C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPD65R1K4C6 DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and p
8.22. Size:940K infineon
ipd65r1k5ce.pdf 
IPD65R1K5CE MOSFET DPAK 650V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high
8.23. Size:242K inchange semiconductor
ipd65r950cfd.pdf 
isc N-Channel MOSFET Transistor IPD65R950CFD,IIPD65R950CFD FEATURES Static drain-source on-resistance RDS(on) 0.95 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI
8.24. Size:243K inchange semiconductor
ipd65r380c6.pdf 
isc N-Channel MOSFET Transistor IPD65R380C6,IIPD65R380C6 FEATURES Static drain-source on-resistance RDS(on) 0.38 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
8.25. Size:242K inchange semiconductor
ipd65r250c6.pdf 
isc N-Channel MOSFET Transistor IPD65R250C6,IIPD65R250C6 FEATURES Static drain-source on-resistance RDS(on) 0.25 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo
8.26. Size:242K inchange semiconductor
ipd65r600e6.pdf 
isc N-Channel MOSFET Transistor IPD65R600E6,IIPD65R600E6 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
8.27. Size:241K inchange semiconductor
ipd65r225c7.pdf 
isc N-Channel MOSFET Transistor IPD65R225C7,IIPD65R225C7 FEATURES Static drain-source on-resistance RDS(on) 0.225 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS
8.28. Size:242K inchange semiconductor
ipd65r650ce.pdf 
isc N-Channel MOSFET Transistor IPD65R650CE,IIPD65R650CE FEATURES Static drain-source on-resistance RDS(on) 0.65 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
8.29. Size:242K inchange semiconductor
ipd65r1k0ce.pdf 
isc N-Channel MOSFET Transistor IPD65R1K0CE,IIPD65R1K0CE FEATURES Static drain-source on-resistance RDS(on) 1 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
8.30. Size:242K inchange semiconductor
ipd65r250e6.pdf 
isc N-Channel MOSFET Transistor IPD65R250E6,IIPD65R250E6 FEATURES Static drain-source on-resistance RDS(on) 0.25 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo
8.31. Size:242K inchange semiconductor
ipd65r190c7.pdf 
isc N-Channel MOSFET Transistor IPD65R190C7,IIPD65R190C7 FEATURES Static drain-source on-resistance RDS(on) 0.19 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS
8.32. Size:242K inchange semiconductor
ipd65r1k4cfd.pdf 
isc N-Channel MOSFET Transistor IPD65R1K4CFD,IIPD65R1K4CFD FEATURES Static drain-source on-resistance RDS(on) 1.4 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
8.33. Size:243K inchange semiconductor
ipd65r380e6.pdf 
isc N-Channel MOSFET Transistor IPD65R380E6,IIPD65R380E6 FEATURES Static drain-source on-resistance RDS(on) 0.38 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo
8.34. Size:242K inchange semiconductor
ipd65r950c6.pdf 
isc N-Channel MOSFET Transistor IPD65R950C6,IIPD65R950C6 FEATURES Static drain-source on-resistance RDS(on) 0.95 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
8.35. Size:241K inchange semiconductor
ipd65r600c6.pdf 
isc N-Channel MOSFET Transistor IPD65R600C6,IIPD65R600C6 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V
8.36. Size:242K inchange semiconductor
ipd65r1k4c6.pdf 
isc N-Channel MOSFET Transistor IPD65R1K4C6,IIPD65R1K4C6 FEATURES Static drain-source on-resistance RDS(on) 1.4 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
8.37. Size:242K inchange semiconductor
ipd65r1k5ce.pdf 
isc N-Channel MOSFET Transistor IPD65R1K5CE,IIPD65R1K5CE FEATURES Static drain-source on-resistance RDS(on) 1.5 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
8.38. Size:241K inchange semiconductor
ipd65r660cfd.pdf 
isc N-Channel MOSFET Transistor IPD65R660CFD,IIPD65R660CFD FEATURES Static drain-source on-resistance RDS(on) 0.66 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta
Другие IGBT... IPDH4N03LAG, IPD80R2K8CE, IPD80R1K4CE, IPD80R1K0CE, IPD65R950CFD, IPD65R950C6, IPD65R660CFDA, IPD65R420CFDA, 20N60, IPD65R250E6, IPD65R250C6, IPD65R225C7, IPD65R1K4CFD, IPD65R1K4C6, IPD65R190C7, IPD60R800CE, IPD60R650CE
