Справочник MOSFET. IPD60R380P6

 

IPD60R380P6 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPD60R380P6
   Маркировка: 6R380P6
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 83 W
   Предельно допустимое напряжение сток-исток |Uds|: 600 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4.5 V
   Максимально допустимый постоянный ток стока |Id|: 10.6 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 19 nC
   Время нарастания (tr): 6 ns
   Выходная емкость (Cd): 42 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.38 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для IPD60R380P6

 

 

IPD60R380P6 Datasheet (PDF)

 ..1. Size:2739K  infineon
ipa60r380p6 ipd60r380p6 ipp60r380p6.pdf

IPD60R380P6 IPD60R380P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R380P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPP60R380P6, IPA60R380P6, IPD60R380P6TO-220 TO-220 FP DPAK1 Descriptiontab tabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accor

 ..2. Size:2540K  infineon
ipb60r380p6 ipp60r380p6 ipd60r380p6 ipa60r380p6.pdf

IPD60R380P6 IPD60R380P6

IPB60R380P6, IPP60R380P6, IPD60R380P6,IPA60R380P6MOSFETDPAK PG-TO 220 DPAK600V CoolMOS P6 Power Transistortab tabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and22pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 133experience of the leading SJ MOSFET suppli

 ..3. Size:242K  inchange semiconductor
ipd60r380p6.pdf

IPD60R380P6 IPD60R380P6

isc N-Channel MOSFET Transistor IPD60R380P6,IIPD60R380P6FEATURESStatic drain-source on-resistance:RDS(on)0.38Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sourc

 5.1. Size:1213K  infineon
ipd60r380c6.pdf

IPD60R380P6 IPD60R380P6

MOSFET+ =L9D - PA

 5.2. Size:1368K  infineon
ipd60r380c6 ipi60r380c6 ipb60r380c6 ipp60r380c6 ipa60r380c6.pdf

IPD60R380P6 IPD60R380P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R380C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPD60R380C6, IPI60R380C6IPB60R380C6, IPP60R380C6IPA60R380C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according

 5.3. Size:998K  infineon
ipd60r380e6.pdf

IPD60R380P6 IPD60R380P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R380E6Data SheetRev. 2.5FinalPower Management & Multimarket C lMO e n i t I I I D O O D 1 Descriptint b tabC lMO i e l ti n te n l i lt e p eMO e i ne in t t e pej n ti n ) pin iple n 2pi neee b In ine n e n l ie C

 5.4. Size:943K  infineon
ipp60r380e6 ipa60r380e6 ipd60r380e6.pdf

IPD60R380P6 IPD60R380P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R380E6Data SheetRev. 2.6FinalPower Management & Multimarket C lMO e n i t I I I D O O D 1 Descriptint b tabC lMO i e l ti n te n l i lt e p eMO e i ne in t t e pej n ti n ) pin iple n 2pi neee b In ine n e n l ie C

 5.5. Size:242K  inchange semiconductor
ipd60r380c6.pdf

IPD60R380P6 IPD60R380P6

isc N-Channel MOSFET Transistor IPD60R380C6,IIPD60R380C6FEATURESStatic drain-source on-resistance:RDS(on)0.38Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSS

 5.6. Size:210K  inchange semiconductor
ipd60r380e6.pdf

IPD60R380P6 IPD60R380P6

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPD60R380E6FEATURESWith TO-252(DPAK) packagingWith low gate drive requirementsVery high commutation ruggednessExtremely high frequency operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLCD&PDP TVPC si

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