Справочник MOSFET. IPD50R800CE

 

IPD50R800CE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPD50R800CE
   Маркировка: 5R800CE
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 40 W
   Предельно допустимое напряжение сток-исток |Uds|: 500 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3.5 V
   Максимально допустимый постоянный ток стока |Id|: 5 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 5.5 ns
   Выходная емкость (Cd): 23 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.8 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для IPD50R800CE

 

 

IPD50R800CE Datasheet (PDF)

 ..1. Size:1057K  infineon
ipd50r800ce.pdf

IPD50R800CE
IPD50R800CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPD50R800CEData SheetRev. 2.0FinalIndustrial & Multimarket500V CoolMOS CE Power TransistorIPD50R800CEDPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjunction (SJ) principle and pioneered by

 ..2. Size:242K  inchange semiconductor
ipd50r800ce.pdf

IPD50R800CE
IPD50R800CE

isc N-Channel MOSFET Transistor IPD50R800CE,IIPD50R800CEFEATURESStatic drain-source on-resistance:RDS(on)800mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSS

 8.1. Size:1624K  1
ipd50r1k4ce ipu50r1k4ce 50s1k4ce.pdf

IPD50R800CE
IPD50R800CE

IPD50R1K4CE, IPU50R1K4CEMOSFETDPAK IPAK500V CoolMOS CE Power TransistortabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 11233price-performance optimized platform enabling to target cost sensitiveapplications in Consumer an

 8.2. Size:2508K  infineon
ipd50r2k0ce ipu50r2k0ce.pdf

IPD50R800CE
IPD50R800CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R2K0CEData SheetRev. 2.1FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPD50R2K0CE, IPU50R2K0CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

 8.3. Size:1840K  infineon
ipd50r380ce.pdf

IPD50R800CE
IPD50R800CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPD50R380CEData SheetRev. 2.1FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPD50R380CEDPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andp

 8.4. Size:1057K  infineon
ipd50r650ce.pdf

IPD50R800CE
IPD50R800CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPD50R650CEData SheetRev. 2.0FinalIndustrial & Multimarket500V CoolMOS CE Power TransistorIPD50R650CEDPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjunction (SJ) principle and pioneered by

 8.5. Size:1046K  infineon
ipd50r500ce.pdf

IPD50R800CE
IPD50R800CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPD50R500CEData SheetRev. 2.0FinalIndustrial & Multimarket500V CoolMOS CE Power TransistorIPD50R500CEDPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjunction (SJ) principle and pioneered by

 8.6. Size:2499K  infineon
ipd50r950ce ipu50r950ce.pdf

IPD50R800CE
IPD50R800CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R950CEData SheetRev. 2.1FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPD50R950CE, IPU50R950CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

 8.7. Size:751K  infineon
ipd50r399cp.pdf

IPD50R800CE
IPD50R800CE

IPD50R399CPCoolMOSTM Power TransistorProduct SummaryProduct SummaryFeaturesV"1 @Tjmax 550 VV"1 @Tjmax 550 VV *EL;HI

 8.8. Size:658K  infineon
ipd50r399cp rev2 1b.pdf

IPD50R800CE
IPD50R800CE

IPD50R399CPCoolMOSTM Power TransistorProduct SummaryProduct SummaryFeaturesV"1 @Tjmax 550 VV"1 @Tjmax 550 VV *EL;HI

 8.9. Size:615K  infineon
ipd50r520cp.pdf

IPD50R800CE
IPD50R800CE

TypeIPD50R520CPCoolMOSTM Power TransistorProduct SummaryProduct SummaryPackageV"1@Tjmax 550 VV"1@Tjmax 550 VV*EL;HI

 8.10. Size:2513K  infineon
ipd50r3k0ce ipu50r3k0ce.pdf

IPD50R800CE
IPD50R800CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R3K0CEData SheetRev. 2.1FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPD50R3K0CE, IPU50R3K0CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

 8.11. Size:1044K  infineon
ipd50r280ce.pdf

IPD50R800CE
IPD50R800CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPD50R280CEData SheetRev. 2.0FinalIndustrial & Multimarket500V CoolMOS CE Power TransistorIPD50R280CEDPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjunction (SJ) principle and pioneered by

 8.12. Size:2492K  infineon
ipd50r1k4ce ipu50r1k4ce.pdf

IPD50R800CE
IPD50R800CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R1K4CEData SheetRev. 2.2FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPD50R1K4CE, IPU50R1K4CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

 8.13. Size:242K  inchange semiconductor
ipd50r380ce.pdf

IPD50R800CE
IPD50R800CE

isc N-Channel MOSFET Transistor IPD50R380CE,IIPD50R380CEFEATURESStatic drain-source on-resistance:RDS(on)380mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSS

 8.14. Size:242K  inchange semiconductor
ipd50r650ce.pdf

IPD50R800CE
IPD50R800CE

isc N-Channel MOSFET Transistor IPD50R650CE,IIPD50R650CEFEATURESStatic drain-source on-resistance:RDS(on)650mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSS

 8.15. Size:241K  inchange semiconductor
ipd50r500ce.pdf

IPD50R800CE
IPD50R800CE

isc N-Channel MOSFET Transistor IPD50R500CE,IIPD50R500CEFEATURESStatic drain-source on-resistance:RDS(on)500mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSS

 8.16. Size:241K  inchange semiconductor
ipd50r2k0ce.pdf

IPD50R800CE
IPD50R800CE

isc N-Channel MOSFET Transistor IPD50R2K0CE,IIPD50R2K0CEFEATURESStatic drain-source on-resistance:RDS(on)2Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV G

 8.17. Size:242K  inchange semiconductor
ipd50r399cp.pdf

IPD50R800CE
IPD50R800CE

isc N-Channel MOSFET Transistor IPD50R399CP,IIPD50R399CPFEATURESStatic drain-source on-resistance:RDS(on)399mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSS

 8.18. Size:242K  inchange semiconductor
ipd50r1k4ce.pdf

IPD50R800CE
IPD50R800CE

isc N-Channel MOSFET Transistor IPD50R1K4CE,IIPD50R1K4CEFEATURESStatic drain-source on-resistance:RDS(on)1.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV

 8.19. Size:241K  inchange semiconductor
ipd50r520cp.pdf

IPD50R800CE
IPD50R800CE

isc N-Channel MOSFET Transistor IPD50R520CP, IIPD50R520CPFEATURESStatic drain-source on-resistance:RDS(on)520mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSS

 8.20. Size:242K  inchange semiconductor
ipd50r950ce.pdf

IPD50R800CE
IPD50R800CE

isc N-Channel MOSFET Transistor IPD50R950CE,IIPD50R950CEFEATURESStatic drain-source on-resistance:RDS(on)0.95Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 8.21. Size:241K  inchange semiconductor
ipd50r3k0ce.pdf

IPD50R800CE
IPD50R800CE

isc N-Channel MOSFET Transistor IPD50R3K0CE,IIPD50R3K0CEFEATURESStatic drain-source on-resistance:RDS(on)3Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV G

 8.22. Size:242K  inchange semiconductor
ipd50r280ce.pdf

IPD50R800CE
IPD50R800CE

isc N-Channel MOSFET Transistor IPD50R280CE,IIPD50R280CEFEATURESStatic drain-source on-resistance:RDS(on)280mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSS

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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