Справочник MOSFET. IRFP450FI

 

IRFP450FI MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFP450FI
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 70 W
   Предельно допустимое напряжение сток-исток |Uds|: 500 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 9 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 120(max) nC
   Время нарастания (tr): 50(max) ns
   Выходная емкость (Cd): 600(max) pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.4 Ohm
   Тип корпуса: ISOWATT218

 Аналог (замена) для IRFP450FI

 

 

IRFP450FI Datasheet (PDF)

 ..1. Size:284K  1
irfw450 irfp450 irfp450fi.pdf

IRFP450FI
IRFP450FI

 7.1. Size:199K  international rectifier
irfp450npbf.pdf

IRFP450FI
IRFP450FI

PD- 95663SMPS MOSFETIRFP450NPbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply 500V 0.37 14Al High Speed Power Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanche

 7.2. Size:101K  international rectifier
irfp450a.pdf

IRFP450FI
IRFP450FI

PD -91884SMPS MOSFETIRFP450AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.40 14A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Current

 7.3. Size:159K  international rectifier
irfp450lc.pdf

IRFP450FI
IRFP450FI

PD - 9.1231IRFP450LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementVDSS = 500VEnhanced 30V Vgs RatingReduced Ciss, Coss, CrssRDS(on) = 0.40Isolated Central Mounting HoleDynamic dv/dt RatedRepetitive Avalanche Rated ID = 14ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional

 7.4. Size:878K  international rectifier
irfp450pbf.pdf

IRFP450FI
IRFP450FI

PD - 94852IRFP450PbF Lead-Freewww.irf.com 111/17/03IRFP450PbF2 www.irf.comIRFP450PbFwww.irf.com 3IRFP450PbF4 www.irf.comIRFP450PbFwww.irf.com 5IRFP450PbF6 www.irf.comIRFP450PbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)15.30 (.602)0.25 (.010) M D B M2

 7.5. Size:876K  international rectifier
irfp450.pdf

IRFP450FI
IRFP450FI

PD - 94852IRFP450PbF Lead-Free11/17/03Document Number: 91233 www.vishay.com1IRFP450PbFDocument Number: 91233 www.vishay.com2IRFP450PbFDocument Number: 91233 www.vishay.com3IRFP450PbFDocument Number: 91233 www.vishay.com4IRFP450PbFDocument Number: 91233 www.vishay.com5IRFP450PbFDocument Number: 91233 www.vishay.com6IRFP450PbFTO-247AC Package O

 7.6. Size:204K  international rectifier
irfp450r irfp451r irfp452r irfp453r.pdf

IRFP450FI
IRFP450FI

 7.7. Size:121K  international rectifier
irfp450n.pdf

IRFP450FI
IRFP450FI

PD- 94216SMPS MOSFETIRFP450NHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply 500V 0.37 14Al High Speed Power SwitchingBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanche Voltage and Cur

 7.8. Size:195K  international rectifier
irfp450apbf.pdf

IRFP450FI
IRFP450FI

PD -95054SMPS MOSFETIRFP450APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 500V 0.40 14Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance and Avala

 7.10. Size:276K  st
irfp450.pdf

IRFP450FI
IRFP450FI

IRFP450N-CHANNEL 500V - 0.31 - 14A TO-247PowerMeshII MOSFETTYPE VDSS RDS(on) IDIRFP450 500V

 7.11. Size:729K  fairchild semi
irfp450b.pdf

IRFP450FI
IRFP450FI

November 2001IRFP450B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 14A, 500V, RDS(on) = 0.39 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 87 nC)planar, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to Fast s

 7.12. Size:942K  samsung
irfp450a.pdf

IRFP450FI
IRFP450FI

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.308 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val

 7.13. Size:129K  vishay
irfp450n irfp450npbf.pdf

IRFP450FI
IRFP450FI

IRFP450N, SiHFP450NVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementRoHS RDS(on) (Max.) ()VGS = 10 V 0.37 Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANT RuggednessQg (Max.) (nC) 77 Fully Characterized Capacitance andQgs (nC) 26Avalanche Voltage and CurrentQgd (nC) 34 Effect

 7.14. Size:1566K  vishay
irfp450lc sihfp450lc.pdf

IRFP450FI
IRFP450FI

IRFP450LC, SiHFP450LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.40 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 74 Reduced Ciss, Coss, CrssCOMPLIANTQgs (nC) 19 Isolated Central Mounting HoleQgd (nC) 35 Dynamic dV/dt RatedConfiguration

 7.15. Size:302K  vishay
irfp450a sihfp450a.pdf

IRFP450FI
IRFP450FI

IRFP450A, SiHFP450AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.40 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 64RuggednessCOMPLIANTQgs (nC) 16 Fully Characterized Capacitance andQgd (nC) 26Avalanche Voltage and CurrentConfigu

 7.16. Size:1560K  vishay
irfp450 sihfp450.pdf

IRFP450FI
IRFP450FI

IRFP450, SiHFP450Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.40 Isolated Central Mounting Hole RoHS*Qg (Max.) (nC) 150COMPLIANT Fast SwitchingQgs (nC) 20 Ease of ParallelingQgd (nC) 80 Simple Drive RequirementsConfiguration Single Lead (P

 7.17. Size:1570K  infineon
irfp450lc sihfp450lc.pdf

IRFP450FI
IRFP450FI

IRFP450LC, SiHFP450LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.40 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 74 Reduced Ciss, Coss, CrssCOMPLIANTQgs (nC) 19 Isolated Central Mounting HoleQgd (nC) 35 Dynamic dV/dt RatedConfiguration

 7.18. Size:309K  infineon
irfp450a sihfp450a.pdf

IRFP450FI
IRFP450FI

IRFP450A, SiHFP450AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.40 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 64RuggednessCOMPLIANTQgs (nC) 16 Fully Characterized Capacitance andQgd (nC) 26Avalanche Voltage and CurrentConfigu

 7.19. Size:46K  ixys
irfp450.pdf

IRFP450FI
IRFP450FI

IRFP 450 VDSS = 500 VStandard Power MOSFETID(cont) = 14 ARDS(on) = 0.40 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C14 AG = Gate, D = Drain,IDM TC = 25C, pulse width limited by

 7.20. Size:213K  inchange semiconductor
irfp450.pdf

IRFP450FI
IRFP450FI

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP450FEATURESDrain Current I = 14A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in swit

 7.21. Size:236K  inchange semiconductor
irfp450r.pdf

IRFP450FI
IRFP450FI

isc N-Channel MOSFET Transistor IRFP450RFEATURESDrain Current I = 14A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFZ48N , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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