IPB65R190E6 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IPB65R190E6
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 151 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 20.2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 98 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
Тип корпуса: TO-263
Аналог (замена) для IPB65R190E6
IPB65R190E6 Datasheet (PDF)
ipa65r190e6 ipb65r190e6 ipi65r190e6 ipp65r190e6 ipw65r190e6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6650V CoolMOS E6 Power TransistorIPx65R190E6 Data SheetRev. 2.0, 2011-05-13Final Industrial & Multimarket650V CoolMOS E6 Power Transistor IPA65R190E6, IPB65R190E6IPI65R190E6, IPP65R190E6IPW65R190E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi
ipb65r190e6.pdf

Isc N-Channel MOSFET Transistor IPB65R190E6FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
ipa65r190c6 ipb65r190c6 ipi65r190c6 ipp65r190c6 ipw65r190c6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPx65R190C6 Data SheetRev. 2.0, 2011-05-09Final Industrial & Multimarket650V CoolMOS C6 Power Transistor IPA65R190C6, IPB65R190C6IPI65R190C6, IPP65R190C6IPW65R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi
ipw65r190cfda ipb65r190cfda ipp65r190cfda.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R190CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R190CFDA, IPB65R190CFDAIPP65R190CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the sup
Другие MOSFET... IPD024N06N , IPB90R340C3 , IPB80N06S3L-05 , IPB65R660CFDA , IPB65R420CFD , IPB65R310CFDA , IPB65R310CFD , IPB65R225C7 , IRLB4132 , IPB65R190CFDA , IPB65R190CFD , IPB65R190C7 , IPB65R190C6 , IPB65R150CFDA , IPB65R150CFD , IPB65R125C7 , IPB65R110CFDA .
History: FIR60N04LG | IRFS9623 | AM2328N | AP4525GEM-HF | MPSD70M600B | BUK7540-100A
History: FIR60N04LG | IRFS9623 | AM2328N | AP4525GEM-HF | MPSD70M600B | BUK7540-100A



Список транзисторов
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