IPB65R190E6 - описание и поиск аналогов

 ..1. Size:2211K  infineon
 ipa65r190e6 ipb65r190e6 ipi65r190e6 ipp65r190e6 ipw65r190e6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.0, 2011-05-13 Final Industrial & Multimarket 650V CoolMOS E6 Power Transistor IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6 IPW65R190E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi

 ..2. Size:258K  inchange semiconductor
 ipb65r190e6.pdf 

Isc N-Channel MOSFET Transistor IPB65R190E6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 5.1. Size:2212K  infineon
 ipa65r190c6 ipb65r190c6 ipi65r190c6 ipp65r190c6 ipw65r190c6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R190C6 Data Sheet Rev. 2.0, 2011-05-09 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6 IPW65R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi

 5.2. Size:2192K  infineon
 ipw65r190cfda ipb65r190cfda ipp65r190cfda.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPx65R190CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPW65R190CFDA, IPB65R190CFDA IPP65R190CFDA TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the sup

 5.3. Size:2175K  infineon
 ipb65r190cfda ipp65r190cfda ipw65r190cfda.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPx65R190CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPW65R190CFDA, IPB65R190CFDA IPP65R190CFDA TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the sup

 5.4. Size:6482K  infineon
 ipa65r190cfd ipb65r190cfd ipi65r190cfd ipp65r190cfd ipw65r190cfd.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6/CFD 650V 650V CoolMOS C6 CFD Power Transistor IPx65R190CFD Data Sheet Data Sheet Rev. 2.2 Final Industrial & Multimarket IPW65R190CFD , IPB65R190CFD , IPP65R190CFD IPA65R190CFD , IPI65R190CFD 650V CoolMOS C6 CFD Power Transistor TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology fo

 5.5. Size:1734K  infineon
 ipb65r190c7.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPB65R190C7 Data Sheet Rev. 2.1 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPB65R190C7 D PAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and tab

 5.6. Size:258K  inchange semiconductor
 ipb65r190cfd.pdf 

Isc N-Channel MOSFET Transistor IPB65R190CFD FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

 5.7. Size:255K  inchange semiconductor
 ipb65r190c7.pdf 

isc N-Channel MOSFET Transistor IPB65R190C7 FEATURES Static drain-source on-resistance RDS(on) 0.19 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability Improved transconductance ABSOLUTE MAXIMUM RATING

 5.8. Size:258K  inchange semiconductor
 ipb65r190c6.pdf 

Isc N-Channel MOSFET Transistor IPB65R190C6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V