IPB034N03L Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IPB034N03L
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 94 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 6.4 ns
Cossⓘ - Выходная емкость: 1400 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0034 Ohm
Тип корпуса: TO-263
Аналог (замена) для IPB034N03L
IPB034N03L Datasheet (PDF)
ipb034n03l ipp034n03l.pdf

Type IPP034N03L GIPB034N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 3.4mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)
ipb034n03l .pdf

isc N-Channel MOSFET Transistor IPB034N03LDESCRIPTIONDrain Current :I = 80A@ T =25D CDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM RATINGS(T =25)CSY
ipb034n03l.pdf

isc N-Channel MOSFET Transistor IPB034N03LDESCRIPTIONDrain Current :I = 80A@ T =25D CDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM RATINGS(T =25)CSY
ipp034n03lg ipb034n03lg.pdf

Type IPP034N03L GIPB034N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 3.4mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)
Другие MOSFET... IPB04N03LAT , IPB04N03LA , IPB04CN10NG , IPB049N08N5 , IPB042N10N3GE8187 , IPB042N03L , IPB03N03LBG , IPB039N10N3GE8187 , MMD60R360PRH , IPB031N08N5 , IPB029N06N3GE8187 , IPB027N10N5 , IPB026N06N , IPB024N08N5 , IPB020N10N5 , IPB020N08N5 , IPB017N10N5 .
History: CJP10N65 | AOI600A60 | 5N65G-TN3-R | FDMA86108LZ
History: CJP10N65 | AOI600A60 | 5N65G-TN3-R | FDMA86108LZ



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