MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPA80R460CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPA80R460CETO-220 FP1 DescriptionCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combines safety with performan

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA80R460CEFEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

IPA80R450P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power DeviceThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o

IPA80R1K2P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power DeviceThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o

IPA80R600P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power DeviceThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPA80R1K0CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPA80R1K0CETO-220 FP1 DescriptionCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combines safety with performan

IPA80R900P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power DeviceThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPA80R1K4CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPA80R1K4CETO-220 FP1 DescriptionCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combines safety with performan

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPA80R650CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPA80R650CETO-220 FP1 DescriptionCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combines safety with performan

IPA80R750P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power DeviceThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o

IPA80R280P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power DeviceThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o

IPA80R360P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power DeviceThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o

IPA80R1K4P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power DeviceThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPA80R310CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPA80R310CETO-220 FP1 DescriptionCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combines safety with performan

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA80R1K0CEFEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA80R1K4CEFEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA80R650CEFEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPA80R310CEFEATURESWith TO-220F packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sourc