IRFP9131. Аналоги и основные параметры
Наименование производителя: IRFP9131
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 75 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 140 max ns
Cossⓘ - Выходная емкость: 450 max pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm
Тип корпуса: TO3P
Аналог (замена) для IRFP9131
- подборⓘ MOSFET транзистора по параметрам
IRFP9131 даташит
8.1. Size:142K international rectifier
irfp9140n.pdf 
PD - 9.1492A IRFP9140N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175 C Operating Temperature P-Channel RDS(on) = 0.117 Fast Switching G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc
8.3. Size:236K international rectifier
irfp9140npbf.pdf 
PD - 95665 IRFP9140NPbF HEXFET Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = -100V l P-Channel l Fast Switching RDS(on) = 0.117 l Fully Avalanche Rated G l Lead-Free ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re
8.4. Size:1757K international rectifier
irfp9140pbf.pdf 
PD-95991 IRFP9140PbF Lead-Free 12/22/04 Document Number 91238 www.vishay.com 1 IRFP9140PbF Document Number 91238 www.vishay.com 2 IRFP9140PbF Document Number 91238 www.vishay.com 3 IRFP9140PbF Document Number 91238 www.vishay.com 4 IRFP9140PbF Document Number 91238 www.vishay.com 5 IRFP9140PbF Document Number 91238 www.vishay.com 6 IRFP9140PbF Peak Diode Re
8.6. Size:1444K vishay
irfp9140 sihfp9140.pdf 
IRFP9140, SiHFP9140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.20 RoHS P-Channel COMPLIANT Qg (Max.) (nC) 61 Isolated Central Mounting Hole Qgs (nC) 14 175 C Operating Temperature Qgd (nC) 29 Fast Switching Configuration Single Ease of Paralleli
8.7. Size:1478K vishay
irfp9140pbf sihfp9140.pdf 
IRFP9140, SiHFP9140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.20 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 61 Isolated Central Mounting Hole Qgs (nC) 14 175 C Operating Temperature Qgd (nC) 29 Fast Switching Configuration Single Ease of
8.8. Size:66K intersil
irfp9150.pdf 
IRFP9150 Data Sheet August 1999 File Number 2293.4 25A, 100V, 0.150 Ohm, P-Channel Power Features MOSFET 25A, 100V This advanced power MOSFET is designed, tested, and rDS(ON) = 0.150 guaranteed to withstand a specified level of energy in the Single Pulse Avalanche Energy Rated breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon-gate power f
8.9. Size:241K inchange semiconductor
irfp9140n.pdf 
isc P-Channel MOSFET Transistor IRFP9140N IIRFP9140N FEATURES Static drain-source on-resistance RDS(on) 0.117 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and
Другие IGBT... IRFP451, IRFP452, IRFP453, IRFP460, IRFP460A, IRFP460LC, IRFP470, IRFP9130, 10N65, IRFP9132, IRFP9133, IRFP9140, IRFP9140N, IRFP9141, IRFP9142, IRFP9143, IRFP9150
