IPA60R099P6. Аналоги и основные параметры

Наименование производителя: IPA60R099P6

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 34 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 37.9 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10 ns

Cossⓘ - Выходная емкость: 140 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.099 Ohm

Тип корпуса: TO-220F

Аналог (замена) для IPA60R099P6

- подборⓘ MOSFET транзистора по параметрам

 

IPA60R099P6 даташит

 ..1. Size:2269K  infineon
ipa60r099p6 ipp60r099p6 ipw60r099p6 ipw60r099p6 ipp60r099p6 ipa60r099p6.pdfpdf_icon

IPA60R099P6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R099P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R099P6, IPP60R099P6, IPA60R099P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi

 ..2. Size:223K  inchange semiconductor
ipa60r099p6.pdfpdf_icon

IPA60R099P6

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R099P6 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

 4.1. Size:1120K  infineon
ipa60r099p7.pdfpdf_icon

IPA60R099P6

IPA60R099P7 MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Device The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET

 5.1. Size:1150K  infineon
ipa60r099c7.pdfpdf_icon

IPA60R099P6

IPA60R099C7 MOSFET PG-TO 220 FP 600V CoolMOS C7 Power Device CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever w

Другие IGBT... IPA60R400CE, IPA60R380P6, IPA60R330P6, IPA60R280P6, IPA60R230P6, IPA60R190P6, IPA60R160P6, IPA60R125P6, SPP20N60C3, IPA50R950CE, IPA50R800CE, IPA50R650CE, IPA50R500CE, IPA50R280CE, IPA50R190CE, IPA105N15N3, IPA083N10N5