IPA083N10N5 datasheet, аналоги, основные параметры
Наименование производителя: IPA083N10N5
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 36 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 44 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 337 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0083 Ohm
Тип корпуса: TO-220F
Аналог (замена) для IPA083N10N5
- подборⓘ MOSFET транзистора по параметрам
IPA083N10N5 даташит
ipa083n10n5.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 100 V IPA083N10N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 100 V IPA083N10N5 TO-220-FP 1 Description Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resista
ipa083n10n5.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA083N10N5 FEATURES With To-220F package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
ipa083n10nm5s.pdf
IPA083N10NM5S MOSFET PG-TO 220 FP OptiMOSTM 5 Power-Transistor, 100 V Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product validation Qualified
ipa086n10n3g.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS Power-Transistor, 100V OptiMOS 3 Power-Transistor IPA086N10N3 G Data Sheet Rev. 2.4 Final Power Management & Multimarket IPA086N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max 8.6 mW Excellent gate charge x R product (FOM) DS(on) ID 45 A
Другие IGBT... IPA60R099P6, IPA50R950CE, IPA50R800CE, IPA50R650CE, IPA50R500CE, IPA50R280CE, IPA50R190CE, IPA105N15N3, IRFB3607, IPA075N15N3, IPA060N06N, IPA041N04NG, IPA040N06N, IPA029N06N, IRFP4004PBF, IRFP4110PBF, IRFP4127PBF
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: FTF30P35D | FTF25N35DHVT | FTF15N35D | FTE15C35G | FTP02P15G | FTE02P15G | AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1
Popular searches
pk6d0ba mosfet | 2sd726 | c536 transistor equivalent | 2sa1294 datasheet | mp10b transistor | bc182b | 2n3054 transistor equivalent | 2n554



