IRFP4127PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFP4127PBF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 341 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 100 nC
trⓘ - Время нарастания: 18 ns
Cossⓘ - Выходная емкость: 410 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.021 Ohm
Тип корпуса: TO247AC
Аналог (замена) для IRFP4127PBF
IRFP4127PBF Datasheet (PDF)
irfp4127pbf.pdf
IRFP4127PbF HEXFET Power MOSFET Application High Efficiency Synchronous Rectification in SMPS DVDSS 200V Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 17m Hard Switched and High Frequency Circuits G 21mmax SID 75A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Chara
irfp4127pbf.pdf
IRFP4127PbF HEXFET Power MOSFET Application High Efficiency Synchronous Rectification in SMPS DVDSS 200V Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 17m Hard Switched and High Frequency Circuits G 21mmax SID 75A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Chara
irfp4127.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP4127IIRFP4127FEATURESStatic drain-source on-resistance:RDS(on)21mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power
irfp4110pbf.pdf
PD - 97311IRFP4110PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply VDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7m:l Hard Switched and High Frequency Circuitsmax.4.5m:ID (Silicon Limited)180A cID (Package Limited)120ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtRuggednessDl
irfp4137pbf.pdf
IRFP4137PbF HEXFET Power MOSFET Application High Efficiency Synchronous Rectification in SMPS DVDSS 300V Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 56m Hard Switched and High Frequency Circuits G 69mmax SID 38A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Chara
irfp4110pbf.pdf
PD - 97311IRFP4110PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply VDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7m:l Hard Switched and High Frequency Circuitsmax.4.5m:ID (Silicon Limited)180A cID (Package Limited)120ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtRuggednessDl
irfp4137pbf.pdf
IRFP4137PbF HEXFET Power MOSFET Application High Efficiency Synchronous Rectification in SMPS DVDSS 300V Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 56m Hard Switched and High Frequency Circuits G 69mmax SID 38A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Chara
auirfp4110.pdf
AUTOMOTIVE GRADE AUIRFP4110 HEXFET Power MOSFET Features Advanced Process Technology VDSS 100V DUltra Low On-Resistance RDS(on) typ. 3.7mEnhanced dV/dT and dI/dT capability 4.5mmax 175C Operating Temperature GID (Silicon Limited) 180A Fast Switching SRepetitive Avalanche Allowed up to Tjmax ID (Package Lim
irfp4110.pdf
IRFP4110N-Channel Enhancement Mode MOSFETElectrical Characteristics(TC=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitsOff CharacteristicsDrain-Sourtce Breakdown Voltage VGS=0V,ID=250A 100 --- --- VBVDSSZero Gate Voltage Drain Current VGS=0V, VDS=100V --- --- 1 AIDSSGate-Source Leakage CurrentIGSS VGS=20V, VDS=0A --- --- 100 nAOn Chara
irfp4137.pdf
isc N-Channel MOSFET Transistor IRFP4137IIRFP4137FEATURESStatic drain-source on-resistance:RDS(on)69mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Speed Power SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 300 V
irfp4110.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP4110IIRFP4110FEATURESStatic drain-source on-resistance:RDS(on)4.5mEnhancement mode:Vth =2.0 to 4.0 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterr
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Список транзисторов
Обновления
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