IRFP440PBF - описание и поиск аналогов

 ..1. Size:1449K  vishay
 irfp440pbf.pdf 

IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.85 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 63 COMPLIANT Fast Switching Qgs (nC) 11 Ease of Paralleling Qgd (nC) 30 Simple Drive Requirements Configuration Single Lead (Pb

 7.1. Size:373K  international rectifier
 auirfp4409.pdf 

AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 300V Low On-Resistance 175 C Operating Temperature RDS(on) typ. 56m Fast Switching G 69m max Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical

 7.2. Size:925K  international rectifier
 irfp440.pdf 

PD - 95198 IRFP440PbF Lead-Free 4/27/04 Document Number 91228 www.vishay.com 1 IRFP440PbF Document Number 91228 www.vishay.com 2 IRFP440PbF Document Number 91228 www.vishay.com 3 IRFP440PbF Document Number 91228 www.vishay.com 4 IRFP440PbF Document Number 91228 www.vishay.com 5 IRFP440PbF Document Number 91228 www.vishay.com 6 IRFP440PbF TO-247AC Package Ou

 7.3. Size:698K  njs
 irfp440r irfp441r irfp442r irfp443r.pdf 

 7.4. Size:192K  samsung
 irfp440-443 irf840-843.pdf 

 7.5. Size:932K  samsung
 irfp440a.pdf 

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.85 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 0.638 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V

 7.6. Size:1460K  vishay
 irfp440 sihfp440.pdf 

IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.85 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 63 Fast Switching Qgs (nC) 11 Ease of Paralleling Qgd (nC) 30 Simple Drive Requirements Configuration Single Complian

 7.7. Size:476K  infineon
 auirfp4409.pdf 

AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 300V Low On-Resistance 175 C Operating Temperature RDS(on) typ. 56m Fast Switching G 69m max Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical

 7.8. Size:237K  inchange semiconductor
 irfp440a.pdf 

isc N-Channel MOSFET Transistor IRFP440A FEATURES Drain Current I = 8.5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplie

 7.9. Size:236K  inchange semiconductor
 irfp440r.pdf 

isc N-Channel MOSFET Transistor IRFP440R FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies