Справочник MOSFET. IRFP4568PBF

 

IRFP4568PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFP4568PBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 517 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 171 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 119 ns
   Cossⓘ - Выходная емкость: 977 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0059 Ohm
   Тип корпуса: TO247AC

 Аналог (замена) для IRFP4568PBF

 

 

IRFP4568PBF Datasheet (PDF)

 ..1. Size:319K  international rectifier
 irfp4568pbf.pdf

IRFP4568PBF IRFP4568PBF

PD -96175IRFP4568PbFHEXFET Power MOSFETApplicationsl High Efficiency Synchronous Rectification in SMPSDVDSS150Vl Uninterruptible Power SupplyRDS(on) typ.4.8ml High Speed Power Switchingl Hard Switched and High Frequency Circuits Gmax. 5.9mS ID (Silicon Limited) 171Benefitsl Improved Gate, Avalanche and Dynamic dV/dtDRuggednessl Fully Characterized Capacit

 ..2. Size:319K  infineon
 irfp4568pbf.pdf

IRFP4568PBF IRFP4568PBF

PD -96175IRFP4568PbFHEXFET Power MOSFETApplicationsl High Efficiency Synchronous Rectification in SMPSDVDSS150Vl Uninterruptible Power SupplyRDS(on) typ.4.8ml High Speed Power Switchingl Hard Switched and High Frequency Circuits Gmax. 5.9mS ID (Silicon Limited) 171Benefitsl Improved Gate, Avalanche and Dynamic dV/dtDRuggednessl Fully Characterized Capacit

 ..3. Size:213K  inchange semiconductor
 irfp4568pbf.pdf

IRFP4568PBF IRFP4568PBF

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFP4568PBFFEATURESWith TO-247packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 6.1. Size:381K  international rectifier
 auirfp4568-e.pdf

IRFP4568PBF IRFP4568PBF

AUTOMOTIVE GRADEAUIRFP4568AUIRFP4568-EFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS 150Vl 175C Operating TemperatureRDS(on) typ.4.8ml Fast Switchingl Repetitive Avalanche Allowed up to Tjmax G max. 5.9ml Lead-Free, RoHS CompliantSID 171Al Automotive Qualified *DDescriptionDSpecif

 6.2. Size:549K  infineon
 auirfp4568.pdf

IRFP4568PBF IRFP4568PBF

AUIRFP4568 AUTOMOTIVE GRADE AUIRFP4568-E Features VDSS 150V Advanced Planar Technology RDS(on) typ. 4.8m Ultra Low On-Resistance Dynamic dv/dt Rating max. 5.9m 175C Operating Temperature ID 171A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description S

 6.3. Size:243K  inchange semiconductor
 irfp4568.pdf

IRFP4568PBF IRFP4568PBF

isc N-Channel MOSFET Transistor IRFP4568IIRFP4568FEATURESStatic drain-source on-resistance:RDS(on)5.9mEnhancement mode:Vth =3.0 to 5.0 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power Supply

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