FCA20N60FS. Аналоги и основные параметры
Наименование производителя: FCA20N60FS
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 208 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 140 ns
Cossⓘ - Выходная емкость: 1280 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
Тип корпуса: TO-3PN
Аналог (замена) для FCA20N60FS
- подборⓘ MOSFET транзистора по параметрам
FCA20N60FS даташит
fca20n60f fca20n60fs.pdf
December 2008 TM SuperFET FCA20N60F 600V N-CHANNEL FRFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15 balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This a
fch20n60 fca20n60 fca20n60 f109.pdf
December 2008 TM SuperFET FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate cha
fca20n60 fca20n60 f109.pdf
August 2014 FCA20N60 N-Channel SuperFET MOSFET 600 V, 20 A, 190 m Features Description SuperFET MOSFET is Fairchild Semiconductor s first genera- 650V @ TJ = 150 C tion of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 150 m utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 75 nC ) resistance an
fca20n60s fca20n60s f109.pdf
August 2007 TM SuperFET FCA20N60S / FCA20N60S_F109 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Farichild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.22 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate charge perform
Другие IGBT... IRFP4768PBF, IRFP4868PBF, IRFP7430PBF, IRFP7530PBF, IRFP7537PBF, IRFP7718PBF, FCA16N60, FCA16N60F109, IRF540N, FCA20N60S, FCA20N60SF109, FCAB2126, FCB110N65F, FCB11N60FTM, FCB11N60TM, FCB20N60FTM, FCB20N60TM
History: MRF173
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Список транзисторов
Обновления
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