Справочник MOSFET. FCPF220N80

 

FCPF220N80 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FCPF220N80
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 44 W
   Предельно допустимое напряжение сток-исток |Uds|: 800 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4.5 V
   Максимально допустимый постоянный ток стока |Id|: 23 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 78 nC
   Время нарастания (tr): 19 ns
   Выходная емкость (Cd): 100 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.22 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для FCPF220N80

 

 

FCPF220N80 Datasheet (PDF)

 ..1. Size:641K  fairchild semi
fcpf220n80.pdf

FCPF220N80
FCPF220N80

May 2015FCPF220N80N-Channel SuperFET II MOSFET800 V, 23 A, 220 mFeatures Description Typ. RDS(on) = 188 m SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 78 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ. 7.5 uJ @ 4

 8.1. Size:757K  fairchild semi
fcp22n60n fcpf22n60nt.pdf

FCPF220N80
FCPF220N80

July 2009SupreMOS TMFCP22N60N / FCPF22N60NT tmN-Channel MOSFET600V, 22A, 0.165Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchilds next generation of highvoltage super-junction MOSFETs, employs a deep trench filling BVDSS>650V @ TJ = 150oCprocess that differentiates it from preceding multi-epi based tech-nologies.

 8.2. Size:650K  fairchild semi
fcpf2250n80z.pdf

FCPF220N80
FCPF220N80

December 2014FCPF2250N80ZN-Channel SuperFET II MOSFET800 V, 2.6 A, 2.25 Features Description RDS(on) = 1.8 Typ.) SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 11 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ.

 8.3. Size:754K  onsemi
fcp22n60n fcpf22n60nt.pdf

FCPF220N80
FCPF220N80

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.4. Size:689K  onsemi
fcpf2250n80z.pdf

FCPF220N80
FCPF220N80

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.5. Size:248K  inchange semiconductor
fcpf2250n80z.pdf

FCPF220N80
FCPF220N80

isc N-Channel MOSFET Transistor FCPF2250N80ZFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

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