FDB3672 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDB3672
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 120 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 44 A
Максимальная температура канала (Tj): 175 °C
Время нарастания (tr): 59 ns
Выходная емкость (Cd): 247 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.028 Ohm
Тип корпуса: TO-263AB
FDB3672 Datasheet (PDF)
fdb3672 fdb3672 f085.pdf
January 2009FDB3672_F085N-Channel PowerTrench MOSFET100V, 44A, 28mFeatures Applications rDS(ON) = 24m (Typ.), VGS = 10V, ID = 44A DC/DC converters and Off-Line UPS Qg(tot) = 24nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rec
fdb3672-f085.pdf
FDB3672-F085N-Channel PowerTrench MOSFET100V, 44A, 28mApplicationsFeatures rDS(ON) = 24m (Typ.), VGS = 10V, ID = 44A DC/DC converters and Off-Line UPS Qg(tot) = 24nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifier O
fdb3632 f085.pdf
March 2012FDB3632_F085N-Channel PowerTrench MOSFET100V, 80A, 9mFeatures Applications rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A DC/DC converters and Off-Line UPS Qg(tot) = 84nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Recti
fdb3682 fdp3682.pdf
September 2002FDB3682 / FDP3682N-Channel PowerTrench MOSFET100V, 32A, 36mFeatures Applications rDS(ON) = 32m (Typ.), VGS = 10V, ID = 32A DC/DC converters and Off-Line UPS Qg(tot) = 18.5nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchr
fdb3652 fdp3652.pdf
October 2013FDP3652 / FDB3652N-Channel PowerTrench MOSFET 100 V, 61 A, 16 mApplicationsFeatures rDS(on) = 14 m ( Typ.), VGS = 10 V, ID = 61 A Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Qg(tot) = 41 nC ( Typ.), VGS = 10 V Low Miller Charge Motor drives and Uninterruptible Power Supplies Low QRR Body Diode
fdb3652 f085.pdf
October 2008FDB3652_F085N-Channel PowerTrench MOSFET100V, 61A, 16mFeatures Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A DC/DC Converters and Off-line UPS Qg(tot) = 41nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectif
fdb3632 fdp3632 fdi3632 fdh3632.pdf
December 2008FDB3632 / FDP3632 / FDI3632 / FDH3632N-Channel PowerTrench MOSFET100V, 80A, 9mFeatures Applications rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A DC/DC converters and Off-Line UPS Qg(tot) = 84nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode Hi
fdb3652 fdp3652 fdi3652.pdf
October 2003FDB3652 / FDP3652 / FDI3652N-Channel PowerTrench MOSFET100V, 61A, 16mFeatures Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A DC/DC Converters and Off-line UPS Qg(tot) = 41nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Syn
fdh3632 fdp3632 fdb3632.pdf
MOSFET Power, N-Channel,POWERTRENCH)100 V, 80 A, 9 mWFDH3632, FDP3632,FDB3632www.onsemi.comFeatures RDS(ON) = 7.5 mW (Typ.), VGS = 10 V, ID = 80 A Qg (tot) = 84 nC (Typ.), VGS = 10 VVDSS RDS(ON) MAX ID MAX Low Miller Charge100 V 9 mW 80 A Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse)D These Devices are Pb-Free and are R
fdb3682 fdp3682.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdb3652-f085.pdf
FDB3652-F085N-Channel PowerTrench MOSFET Applications100V, 61A, 16m DC/DC Converters and Off-line UPSFeatures Distributed Power Architectures and VRMs rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A Primary Switch for 24V and 48V Systems Qg(tot) = 41nC (Typ.), VGS = 10V High Voltage Synchronous Rectifier Low Miller Charge Direct Injection / Dies
fdb3632-f085.pdf
FDB3632-F085N-Channel PowerTrench MOSFET Applications100V, 80A, 9m DC/DC converters and Off-Line UPSFeatures Distributed Power Architectures and VRMs rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A Primary Switch for 24V and 48V Systems Qg(tot) = 84nC (Typ.), VGS = 10V High Voltage Synchronous Rectifier Low Miller Charge Low QRR Body Diode
fdb3632.pdf
isc N-Channel MOSFET Transistor FDB3632FEATURESWith TO-263 packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 9m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
fdb3682.pdf
isc N-Channel MOSFET Transistor FDB3682FEATURESWith TO-263 packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 36m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
