FDB6690S - параметры транзистора MOSFET, его аналоги, datasheet

FDB6690S Datasheet (PDF)

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SEPTEMBER 2001 FDP6690S/FDB6690S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET 21 A, 30 V. RDS(ON) = 15.5 m @ VGS = 10 V and parallel Schottky diode in synchronous DC:DC RDS(ON) = 23.0 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing

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May 2008FDP6670AS/FDB6670AS tm30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET 31 A, 30 V. RDS(ON) = 8.5 m @ VGS = 10 V and parallel Schottky diode in synchronous DC:DC RDS(ON) = 10.5 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a

9.2. Size:156K fairchild semi
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May 2003FDP6670AL/FDB6670ALN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET has been 80 A, 30 V RDS(ON) = 6.5 m @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 8.5 m @ VGS = 4.5 VDC/DC converters using either synchronous orconventional switching PWM controllers. Critical DC elect

Другие MOSFET... FDB3672 , FDB42AN15A0 , FDB44N25TM , FDB52N20TM , FDB5645 , FDB5800F085 , FDB6021P , FDB6670AS , 10N65 , FDB7030LL86Z , FDB8132 , FDB8160 , FDB8444TS , FDB86563F085 , FDB8874 , FDB8876 , FDB8878 .