January 2001FDC640PP-Channel 2.5V PowerTrench Specified MOSFETGeneral Description FeaturesThis P-Channel 2.5V specified MOSFET uses a rugged 4.5 A, 20 V RDS(ON) = 0.053 @ VGS = 4.5 Vgate version of Fairchilds advanced PowerTrenchRDS(ON) = 0.080 @ VGS = 2.5 Vprocess. It has been optimized for power managementapplications with a wide r

January 2001FDC640PP-Channel 2.5V PowerTrench Specified MOSFETGeneral Description FeaturesThis P-Channel 2.5V specified MOSFET uses a rugged 4.5 A, 20 V RDS(ON) = 0.053 @ VGS = 4.5 Vgate version of Fairchilds advanced PowerTrenchRDS(ON) = 0.080 @ VGS = 2.5 Vprocess. It has been optimized for power managementapplications with a wide r

October 2001FDC6401NDual N-Channel 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThis Dual N-Channel MOSFET has been designed 3.0 A, 20 V. RDS(ON) = 70 m @ VGS = 4.5 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 95 m @ VGS = 2.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimiz

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur