IRFPC30. Аналоги и основные параметры
Наименование производителя: IRFPC30
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 100 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.3 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 19 ns
Cossⓘ - Выходная емкость: 80 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2.2 Ohm
Тип корпуса: TO247AC
Аналог (замена) для IRFPC30
- подборⓘ MOSFET транзистора по параметрам
IRFPC30 даташит
9.2. Size:2059K international rectifier
irfpc40pbf.pdf 
PD - 94933 IRFPC40PbF Lead-Free 1/8/04 Document Number 91240 www.vishay.com 1 IRFPC40PbF Document Number 91240 www.vishay.com 2 IRFPC40PbF Document Number 91240 www.vishay.com 3 IRFPC40PbF Document Number 91240 www.vishay.com 4 IRFPC40PbF Document Number 91240 www.vishay.com 5 IRFPC40PbF Document Number 91240 www.vishay.com 6 IRFPC40PbF TO-247AC Package Out
9.4. Size:154K international rectifier
irfpc50lc.pdf 
PD - 9.1233 IRFPC50LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 600V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.60 Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 11A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional
9.5. Size:107K international rectifier
irfpc60lc-p.pdf 
PD - 99438 IRFPC60LC-P HEXFET Power MOSFET D Ultra Low Gate Charge VDSS = 600V Reduced Gate Drive Requirement Enhanced 30V Vgs Rating RDS(on) = 0.40 Reduced Ciss, Coss, Crss G Isolated Central Mounting Hole Dynamic dv/dt Rated ID = 16A S Repetitive Avalanche Rated Description This new series of Surface Mountable Low Charge HEXFET Power MOSFETs achieve significantly
9.8. Size:1142K international rectifier
irfpc60lcpbf.pdf 
PD - 94878 IRFPC60LCPbF Lead-Free 12/9/03 Document Number 91244 www.vishay.com 1 IRFPC60LCPbF Document Number 91244 www.vishay.com 2 IRFPC60LCPbF Document Number 91244 www.vishay.com 3 IRFPC60LCPbF Document Number 91244 www.vishay.com 4 IRFPC60LCPbF Document Number 91244 www.vishay.com 5 IRFPC60LCPbF Document Number 91244 www.vishay.com 6 IRFPC60LCPbF Docum
9.9. Size:1924K international rectifier
irfpc50pbf.pdf 
PD - 94934 IRFPC50PbF Lead-Free 1/8/04 Document Number 91243 www.vishay.com 1 IRFPC50PbF Document Number 91243 www.vishay.com 2 IRFPC50PbF Document Number 91243 www.vishay.com 3 IRFPC50PbF Document Number 91243 www.vishay.com 4 IRFPC50PbF Document Number 91243 www.vishay.com 5 IRFPC50PbF Document Number 91243 www.vishay.com 6 IRFPC50PbF TO-247AC Package Out
9.11. Size:159K international rectifier
irfpc60lc.pdf 
PD - 9.1234 IRFPC60LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 600V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.40 Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 16A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional
9.12. Size:95K international rectifier
irfpc50a.pdf 
PD- 91898 SMPS MOSFET IRFPC50A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.58 11A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current
9.13. Size:1471K vishay
irfpc40 sihfpc40.pdf 
IRFPC40, SiHFPC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.2 RoHS* COMPLIANT Isolated Central Mounting Hole Qg (Max.) (nC) 60 Fast Switching Qgs (nC) 8.3 Ease of Paralleling Qgd (nC) 30 Simple Drive Requirements Configuration Single Lead (P
9.14. Size:590K vishay
irfpc50lcpbf.pdf 
IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 600 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.60 Enhanced 30 V VGS Rating RoHS* Reduced Ciss, Coss, Crss COMPLIANT Qg (Max.) (nC) 84 Isolated Central Mounting Hole Qgs (nC) 18 Dynamic dV/dt Rating Qgd (nC) 36 Repetitiv
9.15. Size:1478K vishay
irfpc40pbf.pdf 
IRFPC40, SiHFPC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.2 RoHS* COMPLIANT Isolated Central Mounting Hole Qg (Max.) (nC) 60 Fast Switching Qgs (nC) 8.3 Ease of Paralleling Qgd (nC) 30 Simple Drive Requirements Configuration Single Lead (P
9.16. Size:1457K vishay
irfpc50 sihfpc50.pdf 
IRFPC50, SiHFPC50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.60 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 140 COMPLIANT Fast Switching Qgs (nC) 20 Ease of Paralleling Qgd (nC) 69 Simple Drive Requirements Configuration Single Complia
9.17. Size:2429K vishay
irfpc60pbf sihfpc60.pdf 
IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.40 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 26 Ease of Paralleling Qgd (nC) 110 Simple Drive Requirements Configuration Single Compl
9.18. Size:597K vishay
irfpc50lc sihfpc50lc.pdf 
IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 600 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.60 Enhanced 30 V VGS Rating RoHS* Reduced Ciss, Coss, Crss COMPLIANT Qg (Max.) (nC) 84 Isolated Central Mounting Hole Qgs (nC) 18 Dynamic dV/dt Rating Qgd (nC) 36 Repetitive
9.19. Size:895K vishay
irfpc50apbf.pdf 
IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.58 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 70 Ruggedness Qgs (nC) 19 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 28 and Current Configur
9.20. Size:2423K vishay
irfpc60 sihfpc60.pdf 
IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.40 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 26 Ease of Paralleling Qgd (nC) 110 Simple Drive Requirements Configuration Single Compl
9.21. Size:889K vishay
irfpc50a sihfpc50a.pdf 
IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.58 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 70 Ruggedness Qgs (nC) 19 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 28 and Current Configur
9.22. Size:653K vishay
irfpc60lc sihfpc60lc.pdf 
IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 600 Available Reduced Gate Drive Requirement RDS(on) ( )VGS = 10 V 0.40 Enhanced 30 V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 120 Isolated Central Mounting Hole Qgs (nC) 29 Dynamic dV/dt Rated Qgd (nC) 48 Repetitive
9.23. Size:1494K infineon
irfpc40 sihfpc40.pdf 
IRFPC40, SiHFPC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.2 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 60 Fast Switching Qgs (nC) 8.3 Ease of Paralleling Qgd (nC) 30 Simple Drive Requirements Configuration Single Compliant
9.24. Size:1461K infineon
irfpc50 sihfpc50.pdf 
IRFPC50, SiHFPC50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.60 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 140 COMPLIANT Fast Switching Qgs (nC) 20 Ease of Paralleling Qgd (nC) 69 Simple Drive Requirements Configuration Single Complia
9.25. Size:62K inchange semiconductor
irfpc42r.pdf 
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFPC42R FEATURES Drain Current ID= 5.9A@ TC=25 Drain Source Voltage- VDSS= 600V(Min) Static Drain-Source On-Resistance RDS(on) = 1.6 (Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT
9.26. Size:62K inchange semiconductor
irfpc40r.pdf 
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFPC40R FEATURES Drain Current ID= 6.8A@ TC=25 Drain Source Voltage- VDSS= 600V(Min) Static Drain-Source On-Resistance RDS(on) = 1.2 (Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT
9.27. Size:400K inchange semiconductor
irfpc60lc.pdf 
iscN-Channel MOSFET Transistor IRFPC60LC FEATURES Low drain-source on-resistance RDS(ON) 0.4 @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
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