February 2004 FDD6606 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 75 A, 30 V RDS(ON) = 6 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 8 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate

isc N-Channel MOSFET Transistor FDD6606FEATURESDrain Current : I =75A@ T =25D CDrain Source Voltage: V =20V(Min)DSSStatic Drain-Source On-Resistance: R =6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dri

February 2007tmFDD6635 35V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been produced using Fairchild Semiconductors proprietary PowerTrench 59 A, 35 V RDS(ON) = 10 m @ VGS = 10 V technology to deliver low Rdson and optimized Bvdss RDS(ON) = 13 m @ VGS = 4.5 V capability to offer superior performance benefit in the

December 2002 FDD6676S 30V N-Channel PowerTrench MOSFET General Description Features The FDS6676S is designed to replace a DPAK 78 A, 30 V RDS(ON) = 6.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) = 7.1 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Low gate charge

May 2011 FDD6685 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 40 A, 30 V. RDS(ON) = 20 m @ VGS = 10 V RDS(ON) = 30 m @ VGS = 4.5 V Fairchild Semiconductors advanced PowerTrench Fast switching speed process. It has been optimized for power management applications requiring a wide

February 2004FDD6612A/FDU6612A30V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 30 A, 30 V RDS(ON) = 20 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 28 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate

July 2003FDD6690A30V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET is produced using Fairchild 46 A, 30 V RDS(ON) = 12 m @ VGS = 10 VSemiconductors advanced PowerTrench process that RDS(ON) = 14 m @ VGS = 4.5 Vhas been especially tailored to minimize the on stateresistance and yet maintain low gate charge for Low gate chargesu

September 2001 FDD6670S 30V N-Channel PowerTrench SyncFET General Description Features The FDD6670S is designed to replace a single 64 A, 30 V RDS(ON) = 9 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) = 12.5 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Includes S

April 2001 FDD6630A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 21 A, 30 V R = 35 m @ V = 10 V DS(ON) GSspecifically to improve the overall efficiency of DC/DC R = 50 m @ V = 4.5 V DS(ON) GSconverters using either synchronous or conventional switching PWM controllers. It has been optimized for Low g

May 2004 FDD6670AL 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 84 A, 30 V. RDS(ON) = 5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 6 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate c

April 2001 FDD6676 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 78 A, 30 V RDS(ON) = 7.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 8.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for

May 2005 FDD6670AS 30V N-Channel PowerTrench SyncFET General Description Features The FDD6670AS is designed to replace a single 76 A, 30 V RDS(ON) max= 8.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) max= 10.4 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Inclu

April 2001 FDD6672A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 65 A, 30 V. RDS(ON) = 9.5 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 8 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for

April 2001 FDD6644/FDU6644 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 67 A, 30 V. RDS(ON) = 8.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 10.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been opt

December 2002FDD6696/FDU669630V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 50A, 30 V R = 8.0 m @ V = 10 VDS(ON) GSspecifically to improve the overall efficiency of DC/DC R = 10.7 m @ V = 4.5 VDS(ON) GSconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low

July 1999FDD6680N-Channel Logic Level PWM Optimized PowerTrench MOSFETFeaturesGeneral DescriptionThis N-Channel Logic level MOSFET has been designed 55 A, 30 V. RDS(on) = 0.010 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(on) = 0.015 @ VGS = 4.5 V.converters using either synchronous or conventionalswitching PWM controllers. Optimi

December 2010FDD6637_F085P-Channel PowerTrench MOSFET-35V, -21A, 18m ApplicationsFeatures Typ rDS(on) = 9.7m at VGS = -10V, ID =- 14A Inverter Typ rDS(on) = 14.4m at VGS = -4.5V, ID =- 11A Power Supplies Typ Qg(10) = 45nC at VGS = -10V High performance trench technology for extremely low rDS(on). Qualified to AEC Q101 RoHS Compliant2010 Fairchild Sem

April 2001 FDD6692/FDU6692 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 54 A, 30 V. RDS(ON) = 12 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 14.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optim

July 2005FDD6670A30V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 66 A, 30 V RDS(ON) = 8 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 10 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate chargelow ga

April 2008FDD6680AS tm30V N-Channel PowerTrench SyncFETGeneral Description Features The FDD6680AS is designed to replace a single 55 A, 30 V RDS(ON) max= 10.5 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) max= 13.0 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

October 2004FDD6632N-Channel Logic Level UltraFET Trench Power MOSFET30V, 9A, 70mGeneral Description FeaturesThis device employs a new advanced trench MOSFET Fast switchingtechnology and features low gate charge while maintaining rDS(ON) = 0.058 (Typ), VGS = 10V, ID = 9Alow on-resistance. rDS(ON) = 0.090 (Typ), VGS = 4.5V, ID = 6AOptimized for switching

December 2000FDD6680S30V N-Channel PowerTrench SyncFETGeneral Description FeaturesThe FDD6680S is designed to replace a single 55 A, 30 V RDS(ON) = 11 m @ VGS = 10 VMOSFET and Schottky diode in synchronous DC:DCRDS(ON) = 17 m @ VGS = 4.5 Vpower supplies. This 30V MOSFET is designed tomaximize power conversion efficiency, providing a low Inclu

June 2004FDD6682/FDU668230V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 75 A, 30 V RDS(ON) = 6.2 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 8.0 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate charg

November 2007tmFDD6688S 30V N-Channel PowerTrench SyncFET General Description Features The FDD6688S is designed to replace a single TO-252 88 A, 30 V. RDS(ON) = 5.1 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) = 6.3 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

June 2004FDD6682/FDU668230V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 75 A, 30 V RDS(ON) = 6.2 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 8.0 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate charg

June 2004FDD6688/FDU668830V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 84 A, 30 V. RDS(ON) = 5 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 6 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate charge

August 2006 FDD6637 35V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been produced using 55 A, 35 V RDS(ON) = 11.6 m @ VGS = 10 V Fairchild Semiconductors proprietary PowerTrench RDS(ON) = 18 m @ VGS = 4.5 V technology to deliver low Rdson and optimized Bvdss High performance trench technology for extremely capa

February 2000FDD6680AN-Channel, Logic Level, PowerTrench MOSFETFeaturesGeneral DescriptionThis N-Channel Logic level MOSFET is produced using 56 A, 30 V. RDS(ON) = 0.0095 @ VGS = 10 VFairchild Semiconductor's advanced PowerTrench process RDS(ON) = 0.0130 @ VGS = 4.5 V.that has been especially tailored to minimize the on-stateresistance and y

April 2008FDD6676AS tm30V N-Channel PowerTrench SyncFET General Description Features The FDD6676AS is designed to replace a single 90 A, 30 V RDS(ON) = 5.7 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) = 7.1 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Includ

February 2004 FDD6685 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 40 A, 30 V. RDS(ON) = 20 m @ VGS = 10 V RDS(ON) = 30 m @ VGS = 4.5 V Fairchild Semiconductors advanced PowerTrench Fast switching speed process. It has been optimized for power management applications requiring a

February 2004FDD6612A/FDU6612A30V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 30 A, 30 V RDS(ON) = 20 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 28 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate

FDD6630A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 21 A, 30 V R = 35 m @ V = 10 V DS(ON) GSspecifically to improve the overall efficiency of DC/DC R = 50 m @ V = 4.5 V DS(ON) GSconverters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate charge (5n

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDD6685www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.025 at VGS = - 4.5 V - 35APPLICATIONS Load Switch Battery SwitchSTO-252 GDG D S P-Channel MOSFETABS

FDD6680www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOLU

FDD6637www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Compliant to RoHS Directive 2002/95/ECVDS (V) RDS(on) ()ID (A)aAvailable0.009 at VGS = - 10 V 80RoHS*- 30COMPLIANT0.012 at VGS = - 4.5 V 80STO-252GDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitGa

isc N-Channel MOSFET Transistor FDD6635FEATURESDrain Current : I =59A@ T =25D CDrain Source Voltage: V =35V(Min)DSSStatic Drain-Source On-Resistance: R =10m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

isc N-Channel MOSFET Transistor FDD6676SFEATURESDrain Current : I =78A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

isc N-Channel MOSFET Transistor FDD6692FEATURESDrain Current : I =54A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =12m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

isc N-Channel MOSFET Transistor FDD6690AFEATURESDrain Current : I =46A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =12m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor FDD6670SFEATURESDrain Current : I =64A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =59m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor FDD6670ALFEATURESDrain Current : I =84A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor FDD6676FEATURESDrain Current : I =78A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =7.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor FDD6644FEATURESDrain Current : I =67A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =8.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor FDD6672AFEATURESDrain Current : I =65A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =8m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

isc N-Channel MOSFET Transistor FDD6696FEATURESDrain Current : I =50A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =8m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dri

isc N-Channel MOSFET Transistor FDD6680FEATURESDrain Current : I =46A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =10m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

isc N-Channel MOSFET Transistor FDD6670AFEATURESDrain Current : I =66A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =8m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

isc N-Channel MOSFET Transistor FDD6680ASFEATURESDrain Current : I =55A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =10.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor FDD6632FEATURESDrain Current : I =9A@ T =25D CDrain Source Voltage: V =20V(Min)DSSStatic Drain-Source On-Resistance: R =90m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dri

isc N-Channel MOSFET Transistor FDD6680SFEATURESDrain Current : I =55A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =11m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor FDD6688FEATURESDrain Current : I =84A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dri

isc N-Channel MOSFET Transistor FDD6688SFEATURESDrain Current : I =88A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =5.1m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor FDD6682FEATURESDrain Current : I =75A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =6.2m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor FDD6680AFEATURESDrain Current : I =56A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =9.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid