FDD6N20TF. Аналоги и основные параметры

Наименование производителя: FDD6N20TF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 40 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 5.6 ns

Cossⓘ - Выходная емкость: 45 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm

Тип корпуса: D-PAK

Аналог (замена) для FDD6N20TF

- подборⓘ MOSFET транзистора по параметрам

 

FDD6N20TF даташит

 ..1. Size:356K  fairchild semi
 fdd6n20tf.pdf pdf_icon

FDD6N20TF

May 2007 UniFETTM FDD6N20TM tm N-Channel MOSFET 200V, 4.5A, 0.8 Features Description RDS(on) = 0.6 ( Typ. )@ VGS = 10V, ID = 2.3A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 4.7nC ) stripe, DMOS technology. Low Crss ( Typ. 6.3pF ) This advanced technology has been espe

 6.1. Size:618K  fairchild semi
 fdd6n20tm.pdf pdf_icon

FDD6N20TF

November 2013 FDD6N20TM N-Channel UniFETTM MOSFET 200 V, 4.5 A, 800 m Features Description UniFETTM MOSFET is Fairchild Semiconductor s high voltage RDS(on) = 600 m (Typ.) @ VGS = 10 V, ID = 2.3 A MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 4.7 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching p

 6.2. Size:725K  onsemi
 fdd6n20tm.pdf pdf_icon

FDD6N20TF

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.3. Size:287K  inchange semiconductor
 fdd6n20tm.pdf pdf_icon

FDD6N20TF

isc N-Channel MOSFET Transistor FDD6N20TM FEATURES Drain Current I =4.5A@ T =25 D C Drain Source Voltage V =200V(Min) DSS Static Drain-Source On-Resistance R =0.8 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

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