Справочник MOSFET. IRFPC50

 

IRFPC50 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFPC50
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 180 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 140(max) nC
   trⓘ - Время нарастания: 37 ns
   Cossⓘ - Выходная емкость: 300 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
   Тип корпуса: TO247AC

 Аналог (замена) для IRFPC50

 

 

IRFPC50 Datasheet (PDF)

 ..1. Size:164K  international rectifier
irfpc50.pdf

IRFPC50
IRFPC50

 ..2. Size:1924K  international rectifier
irfpc50pbf.pdf

IRFPC50
IRFPC50

PD - 94934IRFPC50PbF Lead-Free1/8/04Document Number: 91243 www.vishay.com1IRFPC50PbFDocument Number: 91243 www.vishay.com2IRFPC50PbFDocument Number: 91243 www.vishay.com3IRFPC50PbFDocument Number: 91243 www.vishay.com4IRFPC50PbFDocument Number: 91243 www.vishay.com5IRFPC50PbFDocument Number: 91243 www.vishay.com6IRFPC50PbFTO-247AC Package Out

 ..3. Size:1457K  vishay
irfpc50 sihfpc50.pdf

IRFPC50
IRFPC50

IRFPC50, SiHFPC50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.60RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 140 COMPLIANT Fast SwitchingQgs (nC) 20 Ease of ParallelingQgd (nC) 69 Simple Drive RequirementsConfiguration Single Complia

 ..4. Size:1461K  infineon
irfpc50 sihfpc50.pdf

IRFPC50
IRFPC50

IRFPC50, SiHFPC50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.60RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 140 COMPLIANT Fast SwitchingQgs (nC) 20 Ease of ParallelingQgd (nC) 69 Simple Drive RequirementsConfiguration Single Complia

 0.1. Size:154K  international rectifier
irfpc50lc.pdf

IRFPC50
IRFPC50

PD - 9.1233IRFPC50LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementVDSS = 600VEnhanced 30V Vgs RatingReduced Ciss, Coss, CrssRDS(on) = 0.60Isolated Central Mounting HoleDynamic dv/dt RatedRepetitive Avalanche Rated ID = 11ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional

 0.2. Size:95K  international rectifier
irfpc50a.pdf

IRFPC50
IRFPC50

PD- 91898SMPS MOSFETIRFPC50AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.58 11A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Current

 0.3. Size:590K  vishay
irfpc50lcpbf.pdf

IRFPC50
IRFPC50

IRFPC50LC, SiHFPC50LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.60 Enhanced 30 V VGS RatingRoHS* Reduced Ciss, Coss, CrssCOMPLIANTQg (Max.) (nC) 84 Isolated Central Mounting HoleQgs (nC) 18 Dynamic dV/dt RatingQgd (nC) 36 Repetitiv

 0.4. Size:597K  vishay
irfpc50lc sihfpc50lc.pdf

IRFPC50
IRFPC50

IRFPC50LC, SiHFPC50LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.60 Enhanced 30 V VGS RatingRoHS* Reduced Ciss, Coss, CrssCOMPLIANTQg (Max.) (nC) 84 Isolated Central Mounting HoleQgs (nC) 18 Dynamic dV/dt RatingQgd (nC) 36 Repetitive

 0.5. Size:895K  vishay
irfpc50apbf.pdf

IRFPC50
IRFPC50

IRFPC50A, SiHFPC50AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.58RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 70RuggednessQgs (nC) 19 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 28 and CurrentConfigur

 0.6. Size:889K  vishay
irfpc50a sihfpc50a.pdf

IRFPC50
IRFPC50

IRFPC50A, SiHFPC50AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.58RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 70RuggednessQgs (nC) 19 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 28 and CurrentConfigur

Другие MOSFET... IRFP9233 , IRFP9240 , IRFP9241 , IRFP9242 , IRFP9243 , IRFPC30 , IRFPC40 , IRFPC48 , IRF730 , IRFPC50A , IRFPC50LC , IRFPC60 , IRFPC60LC , IRFPE30 , IRFPE40 , IRFPE50 , IRFPF30 .

 

 

Back to Top