IRFPC60LC MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFPC60LC
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 280 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 57 ns
Cossⓘ - Выходная емкость: 400 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm
Тип корпуса: TO247AC
IRFPC60LC Datasheet (PDF)
irfpc60lcpbf.pdf
PD - 94878IRFPC60LCPbF Lead-Free12/9/03Document Number: 91244 www.vishay.com1IRFPC60LCPbFDocument Number: 91244 www.vishay.com2IRFPC60LCPbFDocument Number: 91244 www.vishay.com3IRFPC60LCPbFDocument Number: 91244 www.vishay.com4IRFPC60LCPbFDocument Number: 91244 www.vishay.com5IRFPC60LCPbFDocument Number: 91244 www.vishay.com6IRFPC60LCPbFDocum
irfpc60lc.pdf
PD - 9.1234IRFPC60LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementEnhanced 30V Vgs Rating VDSS = 600VReduced Ciss, Coss, CrssIsolated Central Mounting HoleRDS(on) = 0.40Dynamic dv/dt RatedRepetitive Avalanche RatedID = 16ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional
irfpc60lc sihfpc60lc.pdf
IRFPC60LC, SiHFPC60LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600Available Reduced Gate Drive RequirementRDS(on) ()VGS = 10 V 0.40 Enhanced 30 V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 120 Isolated Central Mounting HoleQgs (nC) 29 Dynamic dV/dt RatedQgd (nC) 48 Repetitive
irfpc60lc.pdf
iscN-Channel MOSFET Transistor IRFPC60LCFEATURESLow drain-source on-resistance:RDS(ON) 0.4 @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
irfpc60lc-p.pdf
PD - 99438IRFPC60LC-PHEXFET Power MOSFETD Ultra Low Gate ChargeVDSS = 600V Reduced Gate Drive Requirement Enhanced 30V Vgs RatingRDS(on) = 0.40 Reduced Ciss, Coss, CrssG Isolated Central Mounting Hole Dynamic dv/dt Rated ID = 16AS Repetitive Avalanche RatedDescriptionThis new series of Surface Mountable Low Charge HEXFET Power MOSFETsachieve significantly
irfpc60pbf sihfpc60.pdf
IRFPC60, SiHFPC60Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.40 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 26 Ease of ParallelingQgd (nC) 110 Simple Drive RequirementsConfiguration Single Compl
irfpc60 sihfpc60.pdf
IRFPC60, SiHFPC60Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.40 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 26 Ease of ParallelingQgd (nC) 110 Simple Drive RequirementsConfiguration Single Compl
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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