FDI8442
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDI8442
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 254
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 80
A
Tjⓘ - Максимальная температура канала: 175
°C
Qgⓘ -
Общий заряд затвора: 235
nC
trⓘ -
Время нарастания: 19.3
ns
Cossⓘ - Выходная емкость: 1040
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0029
Ohm
Тип корпуса:
TO-262
Аналог (замена) для FDI8442
FDI8442
Datasheet (PDF)
..1. Size:307K fairchild semi
fdi8442.pdf August 2007FDI8442N-Channel PowerTrench MOSFET40V, 80A, 2.9m Features Applications Automotive Engine Control Typ rDS(on) = 2.3m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 181nC at VGS = 10V Solenoid and Motor Drivers Low Miller Charge Electronic Steering Low Qrr Body Diode Integrated Starter / Alternator UIS Capability (Single Pulse and Repetitiv
..2. Size:282K inchange semiconductor
fdi8442.pdf isc N-Channel MOSFET Transistor FDI8442FEATURESDrain Current I =80A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power su pplies and generalpurpose
8.1. Size:458K fairchild semi
fdi8441 f085.pdf May 2010FDI8441_F085N-Channel PowerTrench MOSFET40V, 80A, 2.7m Features Applications Automotive Engine Control Typ rDS(on) = 2.2m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter /
8.2. Size:303K fairchild semi
fdi8441.pdf July 2007tmFDI8441N-Channel PowerTrench MOSFET40V, 80A, 2.7m Features Applications Automotive Engine Control Typ rDS(on) = 2.2m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter /
8.3. Size:282K inchange semiconductor
fdi8441.pdf isc N-Channel MOSFET Transistor FDI8441FEATURESDrain Current I =80A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power su pplies and generalpurpose
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