Справочник MOSFET. FDMC86160ET100

 

FDMC86160ET100 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDMC86160ET100
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 65 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 43 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 3.6 ns
   Cossⓘ - Выходная емкость: 241 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
   Тип корпуса: POWER33

 Аналог (замена) для FDMC86160ET100

 

 

FDMC86160ET100 Datasheet (PDF)

 ..1. Size:293K  fairchild semi
fdmc86160et100.pdf

FDMC86160ET100
FDMC86160ET100

January 2015FDMC86160ET100N-Channel Shielded Gate PowerTrench MOSFET100 V, 43 A, 14 mFeatures General Description Extended TJ rating to 175C This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Shielded Gate MOSFET Technologyincorporates Shielded Gate technology. This process has been Max rDS(on) = 14 m at VGS = 10 V,

 5.1. Size:195K  fairchild semi
fdmc86160.pdf

FDMC86160ET100
FDMC86160ET100

September 2014FDMC86160N-Channel Shielded Gate PowerTrench MOSFET 100 V, 43 A, 14 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max rDS(on) = 14 m at VGS = 10 V, ID = 9 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 23 m

 5.2. Size:286K  onsemi
fdmc86160.pdf

FDMC86160ET100
FDMC86160ET100

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:381K  1
fdmc86116lz.pdf

FDMC86160ET100
FDMC86160ET100

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.2. Size:313K  fairchild semi
fdmc86102l.pdf

FDMC86160ET100
FDMC86160ET100

December 2010FDMC86102LN-Channel Power Trench MOSFET 100 V, 18 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 34 m at VGS = 4.5 V, ID = 5.5 Abeen especially tailored to minimize the on-state resistance and Low Prof

 7.3. Size:260K  fairchild semi
fdmc86102lz.pdf

FDMC86160ET100
FDMC86160ET100

April 2011FDMC86102LZN-Channel Power Trench MOSFET 100 V, 22 A, 24 mFeatures General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process Max rDS(on) = 35 m at VGS = 4.5 V, ID = 5.5 Athat has been special tailored to minimize the on-state HBM ESD prot

 7.4. Size:318K  fairchild semi
fdmc86106lz.pdf

FDMC86160ET100
FDMC86160ET100

December 2010FDMC86106LZN-Channel Power Trench MOSFET 100 V, 7.5 A, 103 mFeatures General Description Max rDS(on) = 103 m at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process Max rDS(on) = 153 m at VGS = 4.5 V, ID = 2.7 Athat has been special tailored to minimize the on-state HBM E

 7.5. Size:318K  fairchild semi
fdmc86116lz.pdf

FDMC86160ET100
FDMC86160ET100

November 2013FDMC86116LZN-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process Max rDS(on) = 103 m at VGS = 10 V, ID = 3.3 Athat incorporates Shielded Gate technology. This process has Max r

 7.6. Size:344K  fairchild semi
fdmc86102.pdf

FDMC86160ET100
FDMC86160ET100

July 2009FDMC86102N-Channel Power Trench MOSFET 100 V, 20 A, 24 mFeatures General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 38 m at VGS = 6 V, ID = 5 Abeen especially tailored to minimize the on-state resistance and Low Profile -

 7.7. Size:382K  fairchild semi
fdmc86139p.pdf

FDMC86160ET100
FDMC86160ET100

June 2014FDMC86139PP-Channel PowerTrench MOSFET -100 V, -15 A, 67 mFeatures General Description Max rDS(on) = 67 m at VGS = -10 V, ID = -4.4 A This P-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench technology. This Max rDS(on) = 89 m at VGS = -6 V, ID = -3.6 Avery high density process is especially tailored to minimize Very low RDS-

 7.8. Size:488K  onsemi
fdmc86102l.pdf

FDMC86160ET100
FDMC86160ET100

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.9. Size:464K  onsemi
fdmc86102.pdf

FDMC86160ET100
FDMC86160ET100

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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