FDMS8670. Аналоги и основные параметры
Наименование производителя: FDMS8670
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 78 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 42 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 1395 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0026 Ohm
Тип корпуса: POWER56
Аналог (замена) для FDMS8670
- подборⓘ MOSFET транзистора по параметрам
FDMS8670 даташит
fdms8670.pdf
May 2009 FDMS8670 tm N-Channel Power Trench MOSFET 30V, 42A, 2.6m Features General Description Max rDS(on) = 2.6m at VGS = 10V, ID = 24A This N-Channel MOSFET is produced using Fairchild Semiconductor's latest proprietary Power Trench process that Max rDS(on) = 3.8m at VGS = 4.5V, ID = 18A has been especially tailored to minimize on-resistance. This part 100% UIL T
fdms8670s.pdf
October 2014 FDMS8670S tm N-Channel PowerTrench SyncFETTM 30V, 42A, 3.5m Features General Description The FDMS8670S has been designed to minimize losses in Max rDS(on) = 3.5m at VGS = 10V, ID = 20A power conversion application. Advancements in both silicon and Max rDS(on) = 5.0m at VGS = 4.5V, ID = 17A package technologies have been combined to offer the lowest Adva
fdms8670as.pdf
May 2009 FDMS8670AS tm N-Channel PowerTrench SyncFETTM 30V, 42A, 3.0m Features General Description Max rDS(on) = 3.0m at VGS = 10V, ID = 23A The FDMS8670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 4.7m at VGS = 4.5V, ID = 18A package technologies have been combined to offer the lowest Advance
fdms8672s.pdf
May 2009 FDMS8672S N-Channel PowerTrench SyncFETTM 30V, 35A, 5m Features General Description The FDMS8672S has been designed to minimize losses in Max rDS(on) = 5.0m at VGS = 10V, ID = 17A power conversion application. Advancements in both silicon and Max rDS(on) = 7.0m at VGS = 4.5V, ID = 15A package technologies have been combined to offer the lowest Advanced Packa
Другие IGBT... FDMS86255ET150, FDMS86350ET80, FDMS86369F085, FDMS86550ET60, FDMS86568F085, FDMS8660AS, FDMS8660S, FDMS8662, IRLZ44N, FDMS8670AS, FDMS8672AS, FDMS8674, FDMS8690, FDMS8692, FDMS9408F085, FDMT800100DC, FDMT800150DC
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