FDMS8670
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Наименование прибора: FDMS8670
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 78
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 42
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 45
nC
trⓘ -
Время нарастания: 5
ns
Cossⓘ - Выходная емкость: 1395
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0026
Ohm
Тип корпуса:
POWER56
Аналог (замена) для FDMS8670
FDMS8670
Datasheet (PDF)
..1. Size:237K fairchild semi
fdms8670.pdf May 2009FDMS8670tmN-Channel Power Trench MOSFET 30V, 42A, 2.6mFeatures General Description Max rDS(on) = 2.6m at VGS = 10V, ID = 24A This N-Channel MOSFET is produced using Fairchild Semiconductor's latest proprietary Power Trench process that Max rDS(on) = 3.8m at VGS = 4.5V, ID = 18Ahas been especially tailored to minimize on-resistance. This part 100% UIL T
0.1. Size:283K fairchild semi
fdms8670s.pdf October 2014FDMS8670StmN-Channel PowerTrench SyncFETTM 30V, 42A, 3.5mFeatures General DescriptionThe FDMS8670S has been designed to minimize losses in Max rDS(on) = 3.5m at VGS = 10V, ID = 20Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.0m at VGS = 4.5V, ID = 17Apackage technologies have been combined to offer the lowest Adva
0.2. Size:239K fairchild semi
fdms8670as.pdf May 2009FDMS8670AStmN-Channel PowerTrench SyncFETTM 30V, 42A, 3.0mFeatures General Description Max rDS(on) = 3.0m at VGS = 10V, ID = 23A The FDMS8670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 4.7m at VGS = 4.5V, ID = 18Apackage technologies have been combined to offer the lowest Advance
7.1. Size:242K fairchild semi
fdms8672s.pdf May 2009FDMS8672SN-Channel PowerTrench SyncFETTM 30V, 35A, 5mFeatures General DescriptionThe FDMS8672S has been designed to minimize losses in Max rDS(on) = 5.0m at VGS = 10V, ID = 17Apower conversion application. Advancements in both silicon and Max rDS(on) = 7.0m at VGS = 4.5V, ID = 15Apackage technologies have been combined to offer the lowest Advanced Packa
7.2. Size:234K fairchild semi
fdms8674.pdf May 2009FDMS8674tmN-Channel PowerTrench MOSFET 30V, 21A, 5.0mFeatures General Description Max rDS(on) = 5.0m at VGS = 10V, ID = 17A The FDMS8674 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 8.0m at VGS = 4.5V, ID = 14Apackage technologies have been combined to offer the lowest Advanced Packa
7.3. Size:243K fairchild semi
fdms8672as.pdf May 2009FDMS8672AStmN-Channel PowerTrench SyncFETTM 30V, 28A, 5.0mFeatures General Description Max rDS(on) = 5.0m at VGS = 10V, ID = 18A The FDMS8672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 7.0m at VGS = 4.5V, ID = 15Apackage technologies have been combined to offer the lowest Advance
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