IRFPG30 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFPG30
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3.1 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 24 ns
Cossⓘ - Выходная емкость: 140 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
Тип корпуса: TO247AC
IRFPG30 Datasheet (PDF)
irfpg30pbf.pdf
PD- 95718IRFPG30PbF Lead-Free8/3/04Document Number: 91252 www.vishay.com1IRFPG30PbFDocument Number: 91252 www.vishay.com2IRFPG30PbFDocument Number: 91252 www.vishay.com3IRFPG30PbFDocument Number: 91252 www.vishay.com4IRFPG30PbFDocument Number: 91252 www.vishay.com5IRFPG30PbFDocument Number: 91252 www.vishay.com6IRFPG30PbFPeak Diode Recovery d
irfpg30pbf sihfpg30.pdf
IRFPG30, SiHFPG30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 5.0RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 80 COMPLIANT Fast SwitchingQgs (nC) 10 Ease of ParallelingQgd (nC) 42 Simple Drive RequirementsConfiguration Single Complian
irfpg30 sihfpg30.pdf
IRFPG30, SiHFPG30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 5.0RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 80 COMPLIANT Fast SwitchingQgs (nC) 10 Ease of ParallelingQgd (nC) 42 Simple Drive RequirementsConfiguration Single Complian
irfpg30 sihfpg30.pdf
IRFPG30, SiHFPG30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 5.0RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 80 COMPLIANT Fast SwitchingQgs (nC) 10 Ease of ParallelingQgd (nC) 42 Simple Drive RequirementsConfiguration Single Complian
irfpc32 irfpe20 irfpe22 irfpe32 irfpe42 irfpe52 irfpf20 irfpf22 irfpf32 irfpf42 irfpf52 irfpg20 irfpg22 irfpg32 irfpg42 irfpg52.pdf
irfpg50.pdf
PD - 9.543CIRFPG50HEXFET Power MOSFETwww.irf.com 110/29/97IRFPG502 www.irf.comIRFPG50www.irf.com 3IRFPG50 100OPERATION IN THIS AREA LIMITEDBY RDS(on)10us 10100us1ms 110ms TC = 25 C TJ = 150 C Single Pulse0.1 10 100 1000 10000VDS , Drain-to-Source Voltage (V)Fig 8. Maximum Safe OperatingArea4 www.irf.comDI, Drain Current (A
irfpg40.pdf
PD - 94898IRFPG40PbF Lead-Free12/18/03Document Number: 91253 www.vishay.com1IRFPG40PbFDocument Number: 91253 www.vishay.com2IRFPG40PbFDocument Number: 91253 www.vishay.com3IRFPG40PbFDocument Number: 91253 www.vishay.com4IRFPG40PbFDocument Number: 91253 www.vishay.com5IRFPG40PbFDocument Number: 91253 www.vishay.com6IRFPG40PbFTO-247AC Package O
irfpg50pbf.pdf
PD - 94806IRFPG50PbFHEXFET Power MOSFET Lead-Freewww.irf.com 110/31/03IRFPG50PbF2 www.irf.comIRFPG50PbFwww.irf.com 3IRFPG50PbF 100OPERATION IN THIS AREA LIMITEDBY RDS(on)10us 10100us1ms 110ms TC = 25 C TJ = 150 C Single Pulse0.1 10 100 1000 10000VDS , Drain-to-Source Voltage (V)Fig 8. Maximum Safe OperatingArea4 www.irf.com
irfpg50 sihfpg50.pdf
IRFPG50, SiHFPG50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0 Isolated Central Mounting HoleQg (Max.) (nC) 190 Fast SwitchingQgs (nC) 23Qgd (nC) 110 Ease of ParallelingConfiguration Single Simple Drive Requirements Compliant to RoHS Directive 2002/9
irfpg40 sihfpg40.pdf
IRFPG40, SiHFPG40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.5RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 120 COMPLIANT Fast SwitchingQgs (nC) 16Qgd (nC) 65 Ease of ParallelingConfiguration Single Simple Drive Requirements Complian
irfpg40pbf sihfpg40.pdf
IRFPG40, SiHFPG40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.5RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 120 COMPLIANT Fast SwitchingQgs (nC) 16Qgd (nC) 65 Ease of ParallelingConfiguration Single Simple Drive Requirements Complian
irfpg40.pdf
isc N-Channel MOSFET Transistor IRFPG40DESCRIPTIONDrain Current I = 4.3A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC Adapter, Battery Charge and SMPSABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL VALUE UNITARAME
Другие MOSFET... IRFPC60 , IRFPC60LC , IRFPE30 , IRFPE40 , IRFPE50 , IRFPF30 , IRFPF40 , IRFPF50 , 5N65 , IRFPG40 , IRFPG50 , IRFPS37N50A , IRFPS59N60C , IRFR010 , IRFR012 , IRFR014 , IRFR014A .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918