FDPF18N20F
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDPF18N20F
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 41
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 18
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 50
ns
Cossⓘ - Выходная емкость: 200
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.14
Ohm
Тип корпуса:
TO-220F
Аналог (замена) для FDPF18N20F
FDPF18N20F
Datasheet (PDF)
..1. Size:658K fairchild semi
fdpf18n20f.pdf 
September 2009UniFETTMFDP18N20F / FDPF18N20FTtmN-Channel MOSFET200V, 18A, 0.14Features Description RDS(on) = 0.12 ( Typ.)@ VGS = 10V, ID = 9A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 20nC)stripe, DMOS technology. Low Crss ( Typ. 24pF)This advanced technology h
..2. Size:685K fairchild semi
fdp18n20f fdpf18n20f.pdf 
September 2009UniFETTMFDP18N20F / FDPF18N20FTtmN-Channel MOSFET200V, 18A, 0.14Features Description RDS(on) = 0.12 ( Typ.)@ VGS = 10V, ID = 9A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 20nC)stripe, DMOS technology. Low Crss ( Typ. 24pF)This advanced technology h
0.1. Size:601K fairchild semi
fdpf18n20ft g.pdf 
April 2013FDPF18N20FT_G N-Channel UniFETTM FRFET MOSFET 200 V, 18 A, 140 m Features DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 129 m (Typ.) @ VGS = 10 V, ID = 9 AMOSFET family based on planar stripe and DMOS technology. This Low Gate Charge (Typ. 20 nC)MOSFET is tailored to reduce on-state resistance, and to provide bette
0.2. Size:938K onsemi
fdp18n20f fdpf18n20ft.pdf 
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.1. Size:870K fairchild semi
fdp18n50 fdpf18n50 fdpf18n50t.pdf 
November 2013FDP18N50 / FDPF18N50 / FDPF18N50TN-Channel UniFETTM MOSFET500 V, 18 A, 265 mFeatures Description RDS(on) = 220 m (Typ.) @ VGS = 10 V, ID = 9 A UniFETTM MOSFET is Fairchild Semiconductors high voltageMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 45 nC)This MOSFET is tailored to reduce on-state resistance, and to Low
7.2. Size:466K fairchild semi
fdp18n50 fdpf18n50.pdf 
April 2007TMUniFETFDP18N50 / FDPF18N50500V N-Channel MOSFETFeatures Description 18A, 500V, RDS(on) = 0.265 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 45 nC)stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially
7.3. Size:1572K onsemi
fdp18n50 fdpf18n50 fdpf18n50t.pdf 
FDP18N50 / FDPF18N50 / FDPF18N50TN-Channel UniFETTM MOSFET500 V, 18 A, 265 mFeatures RDS(on) = 220 m (Typ.) @ VGS = 10 V, ID = 9 ADescription Low Gate Charge (Typ. 45 nC)UniFETTM MOSFET is ON Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. Low Crss (Typ. 25 pF)This MOSFET is tailored to reduce on-state resistance, and to
7.4. Size:1033K onsemi
fdp18n50 fdpf18n50.pdf 
October 2006TMUniFETFDP18N50 / FDPF18N50500V N-Channel MOSFETFeatures Description 18A, 500V, RDS(on) = 0.265 @VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 45 nC)stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially
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