FDS7066N7. Аналоги и основные параметры

Наименование производителя: FDS7066N7

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 16 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 23 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8 ns

Cossⓘ - Выходная емкость: 826 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm

Тип корпуса: SO-8

Аналог (замена) для FDS7066N7

- подборⓘ MOSFET транзистора по параметрам

 

FDS7066N7 даташит

 ..1. Size:179K  fairchild semi
 fds7066n7.pdf pdf_icon

FDS7066N7

February 2004 FDS7066N7 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 23 A, 30 V RDS(ON) = 4.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 5.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Hig

 6.1. Size:169K  fairchild semi
 fds7066n3.pdf pdf_icon

FDS7066N7

February 2004 FDS7066N3 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 23 A, 30 V RDS(ON) = 5.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 6.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Hig

 7.1. Size:132K  fairchild semi
 fds7066asn3.pdf pdf_icon

FDS7066N7

August 2004 FDS7066ASN3 30V N-Channel PowerTrench SyncFET General Description Features The FDS7066ASN3 is designed to replace a single SO- 19 A, 30 V RDS(ON) = 4.8 m @ VGS = 10 V 8 FLMP MOSFET and Schottky diode in synchronous RDS(ON) = 6.0 m @ VGS = 4.5 V DC DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a

 8.1. Size:169K  fairchild semi
 fds7064n.pdf pdf_icon

FDS7066N7

January 2004 FDS7064N 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 16 A, 30 V RDS(ON) = 7.5 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been optim

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Другие IGBT... FDS6688S, FDS6694, FDS7060N7, FDS7064N, FDS7064N7, FDS7064SN3, FDS7066ASN3, FDS7066N3, IRFP460, FDS7079ZN3, FDS7082N3, FDS7088N3, FDS7088N7, FDS7088SN3, FDS7096N3, FDS7098N3, FDS7288N3