Справочник MOSFET. FDS7082N3

 

FDS7082N3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDS7082N3
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 17.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 43 nC
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 554 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для FDS7082N3

 

 

FDS7082N3 Datasheet (PDF)

 ..1. Size:172K  fairchild semi
 fds7082n3.pdf

FDS7082N3 FDS7082N3

February 2004 FDS7082N3 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET in the thermally enhanced 17.5 A, 30 V RDS(ON) = 6 m @ VGS = 10 V SO8 FLMP package has been designed specifically to RDS(ON) = 8 m @ VGS = 4.5 V improve the overall efficiency of DC/DC converters. Providing a balance of low RDS(ON) and Qg it is ideal for

 8.1. Size:188K  fairchild semi
 fds7088sn3.pdf

FDS7082N3 FDS7082N3

August 2004 FDS7088SN3 30V N-Channel PowerTrench SyncFET General Description Features The FDS7088SN3 is designed to replace a single SO-8 21 A, 30 V RDS(ON) = 4.0 m @ VGS = 10 V FLMP MOSFET and Schottky diode in synchronous RDS(ON) = 4.9 m @ VGS = 4.5 V DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a

 8.2. Size:177K  fairchild semi
 fds7088n7.pdf

FDS7082N3 FDS7082N3

February 2004 FDS7088N7 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 23 A, 30 V RDS(ON) = 3 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 4 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High pe

 8.3. Size:169K  fairchild semi
 fds7088n3.pdf

FDS7082N3 FDS7082N3

February 2004 FDS7088N3 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 21 A, 30 V RDS(ON) = 4 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High pe

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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