IRFR022. Аналоги и основные параметры
Наименование производителя: IRFR022
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 42 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 50 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 14 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 17.8 ns
Cossⓘ - Выходная емкость: 218 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm
Тип корпуса: TO252
Аналог (замена) для IRFR022
- подборⓘ MOSFET транзистора по параметрам
IRFR022 даташит
8.2. Size:178K international rectifier
irfr024n.pdf 
PD- 9.1336A IRFR/U024N PRELIMINARY HEXFET Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR024N) VDSS = 55V Straight Lead (IRFU024N) Advanced Process Technology RDS(on) = 0.075 G Fast Switching Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possi
8.3. Size:1456K international rectifier
irfr024pbf irfu024pbf.pdf 
PD- 95236A IRFR024PbF IRFU024PbF Lead-Free Absolute Maximum Ratings 12/03/04 Document Number 91264 www.vishay.com 1 IRFR/U024PbF Document Number 91264 www.vishay.com 2 IRFR/U024PbF Document Number 91264 www.vishay.com 3 IRFR/U024PbF Document Number 91264 www.vishay.com 4 IRFR/U024PbF Document Number 91264 www.vishay.com 5 IRFR/U024PbF Document Number 91264 ww
8.5. Size:400K international rectifier
irfr024npbf irfu024npbf.pdf 
PD - 95066A IRFR024NPbF IRFU024NPbF Lead-Free www.irf.com 1 12/14/04 IRFR/U024NPbF 2 www.irf.com IRFR/U024NPbF www.irf.com 3 IRFR/U024NPbF 4 www.irf.com IRFR/U024NPbF www.irf.com 5 IRFR/U024NPbF 6 www.irf.com IRFR/U024NPbF www.irf.com 7 IRFR/U024NPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Inform
8.6. Size:1391K international rectifier
irfr020.pdf 
PD- 97064 IRFR020 HEXFET Power MOSFET Dynamic dv/dt Rating Surface Mount (IRFR020) Available in Tape & Reel Fast Switching Ease of Paralleling Simple Drive Requirements D S D G D-Pak IRFR020 GDS Absolute Maximum Ratings Gate Drain Source 11/16/05 Document Number 90335 www.vishay.com 1 IRFR020 Document Number 90335 www.vishay.com 2 IRFR020 D
8.7. Size:495K samsung
irfr024a.pdf 
Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input Capacitance ID = 15 A Improved Gate Charge Extended Safe Operating Area A Lower Leakage Current 10 (Max.) @ VDS = 60V Lower RDS(ON) 0.050 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characte
8.8. Size:1051K vishay
irfr020 irfu020 sihfr020 sihfu020.pdf 
IRFR020, IRFU020, SiHFR020, SiHFU020 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( )VGS = 10 V 0.10 Dynamic dV/dt Rating Qg (Max.) (nC) 25 Surface Mount (IRFR020, SiHFR020) Qgs (nC) 5.8 Available in Tape and Reel Fast Switching Qgd (nC) 11 Ease of Paralleling Configuration
8.9. Size:1159K vishay
irfr024 irfu024 sihfr024 sihfu024.pdf 
IRFR024, IRFU024, SiHFR024, SiHFU024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.10 Surface Mount (IRFR024, SiHFR024) Qg (Max.) (nC) 25 Straight Lead (IRFU024, SiHFU024) Qgs (nC) 5.8 Available in Tape and Reel Fast Switching Qgd (nC) 11
8.10. Size:1050K vishay
irfr024pbf irfu024 irfu024pbf sihfr024 sihfu024.pdf 
IRFR024, IRFU024, SiHFR024, SiHFU024 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Surface Mount (IRFR024, SiHFR024) RDS(on) ( )VGS = 10 V 0.10 Straight Lead (IRFU024, SiHFU024) Available in Tape and Reel Qg (Max.) (nC) 25 Fast Switching Qgs (nC) 5.8 Ease of Paralleling Qgd (nC) 11 Simple Driv
8.11. Size:1076K vishay
irfr020pbf irfu020pbf sihfr020 sihfu020.pdf 
IRFR020, IRFU020, SiHFR020, SiHFU020 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( )VGS = 10 V 0.10 Dynamic dV/dt Rating Qg (Max.) (nC) 25 Surface Mount (IRFR020, SiHFR020) Qgs (nC) 5.8 Available in Tape and Reel Fast Switching Qgd (nC) 11 Ease of Paralleling Configuration
8.12. Size:483K infineon
auirfr024n auirfu024n.pdf 
AUIRFR024N AUTOMOTIVE GRADE AUIRFU024N Features VDSS 55V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.075 Dynamic dv/dt Rating ID 17A 175 C Operating Temperature Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified * S S
8.13. Size:844K cn vbsemi
irfr024ntr.pdf 
IRFR024NTR www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters Mot
8.14. Size:241K inchange semiconductor
irfr024n.pdf 
isc N-Channel MOSFET Transistor IRFR024N, IIRFR024N FEATURES Static drain-source on-resistance RDS(on) 75m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-
8.15. Size:240K inchange semiconductor
irfr024npbf.pdf 
INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRFR024NPBF FEATURES Drain Current I =17A@ T =25 D C Drain Source Voltage- V = 55V(Min) DSS Static Drain-Source On-Resistance R =75m (Max)@V =10V DS(on) GS High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Minimum Lot-to-Lot variations for robust device perform
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