FDU8780F071. Аналоги и основные параметры
Наименование производителя: FDU8780F071
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 35 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 265 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
Тип корпуса: TO-251AA
Аналог (замена) для FDU8780F071
- подборⓘ MOSFET транзистора по параметрам
FDU8780F071 даташит
fdu8780 fdu8780 f071.pdf
March 2006 FDD8780/FDU8780 N-Channel PowerTrench MOSFET 25V, 35A, 8.5m General Description Features Max rDS(on) = 8.5m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 12.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has be
fdd8780 fdu8780.pdf
March 2006 FDD8780/FDU8780 N-Channel PowerTrench MOSFET 25V, 35A, 8.5m General Description Features Max rDS(on) = 8.5m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 12.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has be
fdu8782.pdf
November 2009 FDD8782/FDU8782 N-Channel PowerTrench MOSFET 25V, 35A, 11m General Description Features Max rDS(on) = 11.0m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 14.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has be
fdd8782 fdu8782.pdf
November 2009 FDD8782/FDU8782 N-Channel PowerTrench MOSFET 25V, 35A, 11m General Description Features Max rDS(on) = 11.0m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 14.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has be
Другие IGBT... FDU6N50TU, FDU7030BL, FDU8580, FDU8586, FDU8770, FDU8770F071, FDU8778, FDU8780, IRF530, FDU8782, FDU8796, FDU8796F071, FDU8870, FDU8874, FDU8876, FDU8878, FDU8880
History: CS7NJZ44V | SML9030-T254
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