Справочник MOSFET. FDU8796F071

 

FDU8796F071 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDU8796F071
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 88 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 35 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 24 ns
   Cossⓘ - Выходная емкость: 455 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0057 Ohm
   Тип корпуса: TO-251AA

 Аналог (замена) для FDU8796F071

 

 

FDU8796F071 Datasheet (PDF)

 7.1. Size:306K  fairchild semi
fdu8796 fdu8796 f071.pdf

FDU8796F071
FDU8796F071

March 2006FDD8796/FDU8796N-Channel PowerTrench MOSFET 25V, 35A, 5.7mGeneral Description Features Max rDS(on) = 5.7m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 8.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has be

 7.2. Size:308K  fairchild semi
fdd8796 fdu8796.pdf

FDU8796F071
FDU8796F071

March 2006FDD8796/FDU8796N-Channel PowerTrench MOSFET 25V, 35A, 5.7mGeneral Description Features Max rDS(on) = 5.7m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 8.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has be

 9.1. Size:356K  fairchild semi
fdu8778.pdf

FDU8796F071
FDU8796F071

May 2006FDD8778/FDU8778tmN-Channel PowerTrench MOSFET 25V, 35A, 14mFeatures General Description Max rDS(on) = 14.0m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 21.0m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWMcontrollers. It has

 9.2. Size:395K  fairchild semi
fdu8782.pdf

FDU8796F071
FDU8796F071

November 2009FDD8782/FDU8782N-Channel PowerTrench MOSFET 25V, 35A, 11mGeneral Description Features Max rDS(on) = 11.0m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 14.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has be

 9.3. Size:418K  fairchild semi
fdd8782 fdu8782.pdf

FDU8796F071
FDU8796F071

November 2009FDD8782/FDU8782N-Channel PowerTrench MOSFET 25V, 35A, 11mGeneral Description Features Max rDS(on) = 11.0m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 14.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has be

 9.4. Size:308K  fairchild semi
fdu8770 fdu8770 f071.pdf

FDU8796F071
FDU8796F071

March 2006FDD8770/FDU8770N-Channel PowerTrench MOSFET 25V, 35A, 4.0mGeneral Description Features Max rDS(on) = 4.0m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 5.5m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has bee

 9.5. Size:312K  fairchild semi
fdu8780 fdu8780 f071.pdf

FDU8796F071
FDU8796F071

March 2006FDD8780/FDU8780N-Channel PowerTrench MOSFET 25V, 35A, 8.5mGeneral Description Features Max rDS(on) = 8.5m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 12.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has be

 9.6. Size:310K  fairchild semi
fdd8770 fdu8770.pdf

FDU8796F071
FDU8796F071

March 2006FDD8770/FDU8770N-Channel PowerTrench MOSFET 25V, 35A, 4.0mGeneral Description Features Max rDS(on) = 4.0m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 5.5m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has bee

 9.7. Size:314K  fairchild semi
fdd8780 fdu8780.pdf

FDU8796F071
FDU8796F071

March 2006FDD8780/FDU8780N-Channel PowerTrench MOSFET 25V, 35A, 8.5mGeneral Description Features Max rDS(on) = 8.5m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 12.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has be

 9.8. Size:358K  fairchild semi
fdd8778 fdu8778.pdf

FDU8796F071
FDU8796F071

May 2006FDD8778/FDU8778tmN-Channel PowerTrench MOSFET 25V, 35A, 14mFeatures General Description Max rDS(on) = 14.0m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 21.0m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWMcontrollers. It has

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