IRFPC50PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFPC50PBF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 180 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 11 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 140 nC
Время нарастания (tr): 37 ns
Выходная емкость (Cd): 300 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.6 Ohm
Тип корпуса: TO-247AC
Аналог (замена) для IRFPC50PBF
IRFPC50PBF Datasheet (PDF)
irfpc50pbf.pdf
PD - 94934IRFPC50PbF Lead-Free1/8/04Document Number: 91243 www.vishay.com1IRFPC50PbFDocument Number: 91243 www.vishay.com2IRFPC50PbFDocument Number: 91243 www.vishay.com3IRFPC50PbFDocument Number: 91243 www.vishay.com4IRFPC50PbFDocument Number: 91243 www.vishay.com5IRFPC50PbFDocument Number: 91243 www.vishay.com6IRFPC50PbFTO-247AC Package Out
irfpc50lc.pdf
PD - 9.1233IRFPC50LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementVDSS = 600VEnhanced 30V Vgs RatingReduced Ciss, Coss, CrssRDS(on) = 0.60Isolated Central Mounting HoleDynamic dv/dt RatedRepetitive Avalanche Rated ID = 11ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional
irfpc50a.pdf
PD- 91898SMPS MOSFETIRFPC50AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.58 11A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Current
irfpc50lcpbf.pdf
IRFPC50LC, SiHFPC50LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.60 Enhanced 30 V VGS RatingRoHS* Reduced Ciss, Coss, CrssCOMPLIANTQg (Max.) (nC) 84 Isolated Central Mounting HoleQgs (nC) 18 Dynamic dV/dt RatingQgd (nC) 36 Repetitiv
irfpc50 sihfpc50.pdf
IRFPC50, SiHFPC50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.60RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 140 COMPLIANT Fast SwitchingQgs (nC) 20 Ease of ParallelingQgd (nC) 69 Simple Drive RequirementsConfiguration Single Complia
irfpc50lc sihfpc50lc.pdf
IRFPC50LC, SiHFPC50LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.60 Enhanced 30 V VGS RatingRoHS* Reduced Ciss, Coss, CrssCOMPLIANTQg (Max.) (nC) 84 Isolated Central Mounting HoleQgs (nC) 18 Dynamic dV/dt RatingQgd (nC) 36 Repetitive
irfpc50apbf.pdf
IRFPC50A, SiHFPC50AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.58RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 70RuggednessQgs (nC) 19 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 28 and CurrentConfigur
irfpc50a sihfpc50a.pdf
IRFPC50A, SiHFPC50AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.58RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 70RuggednessQgs (nC) 19 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 28 and CurrentConfigur
irfpc50 sihfpc50.pdf
IRFPC50, SiHFPC50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.60RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 140 COMPLIANT Fast SwitchingQgs (nC) 20 Ease of ParallelingQgd (nC) 69 Simple Drive RequirementsConfiguration Single Complia
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