IRFPS29N60LPBF - описание и поиск аналогов

 ..1. Size:190K  international rectifier
 irfps29n60lpbf.pdf 

PD - 95907 SMPS MOSFET IRFPS29N60LPbF HEXFET Power MOSFET Applications Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 175m 130ns 29A Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications

 ..2. Size:156K  vishay
 irfps29n60lpbf.pdf 

IRFPS29N60L, SiHFPS29N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Super Fast Body Diode Eliminates the Need VDS (V) 600 for External Diodes in ZVS Applications Available RDS(on) ( )VGS = 10 V 0.175 RoHS* Qg (Max.) (nC) 220 Lower Gate Charge Results in Simpler Drive COMPLIANT Qgs (nC) 67 Requirements Qgd (nC) 96 Enhances dV/dt Capabilities Offer Improv

 3.1. Size:158K  international rectifier
 irfps29n60l.pdf 

PD - 94622 SMPS MOSFET IRFPS29N60L Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 175m 130ns 29A Motor Control applications Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate c

 9.1. Size:54K  international rectifier
 irfps60n50c.pdf 

PD- 93932 PROVISIONAL IRFPS60N50C SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) UninterruptIble Power Supply 500V 0.038 60A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Super-247

 9.2. Size:68K  international rectifier
 irfps59n60c.pdf 

PD - 90380 PROVISIONAL IRFPS59N60C SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 600V 0.045 59A High Speed Power Switching Benefits Low Gate Charge Qg Reduces Drive Required Improved Gate Resistance for Faster Switching Fully Characterized Capacitance and Super-247 Avalanche Voltage an

 9.3. Size:101K  international rectifier
 irfps3815.pdf 

PD - 93911 IRFPS3815 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 150V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.015 Fast Switching G Fully Avalanche Rated ID = 105A S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc

 9.4. Size:121K  international rectifier
 irfps30n60k.pdf 

PD- 94417 IRFPS30N60K SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 600V 160m 30A l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Super-247 Avalanch

 9.5. Size:153K  international rectifier
 irfps37n50apbf.pdf 

PD- 95142 IRFPS37N50APbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 500V 0.13 36A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalan

 9.6. Size:196K  international rectifier
 irfps40n60kpbf.pdf 

PD - 95702 SMPS MOSFET IRFPS40N60KPbF HEXFET Power MOSFET Applications l Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID l Switch Mode Power Supply (SMPS) 600V 0.110 40A l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/

 9.7. Size:115K  international rectifier
 irfps3810.pdf 

PD - 93912B IRFPS3810 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.009 Fast Switching G Fully Avalanche Rated ID = 170A S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resista

 9.8. Size:130K  international rectifier
 irfps43n50kpbf.pdf 

PD- 95898 IRFPS43N50KPbF SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply (SMPS) VDSS RDS(on) typ. ID l Uninterruptible Power Supply l High Speed Power Switching 500V 0.078 47A l Hard Switched and High Frequency Circuits l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggednes

 9.9. Size:174K  international rectifier
 irfps35n50lpbf.pdf 

PD- 95140 IRFPS35N50LPbF SMPS MOSFET HEXFET Power MOSFET Applications Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies 500V 0.125 170ns 34A Uninterruptible Power Supplies Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications.

 9.10. Size:99K  international rectifier
 irfps43n50k.pdf 

PD- 93922B SMPS MOSFET IRFPS43N50K HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.078 47A High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characteriz

 9.11. Size:107K  international rectifier
 irfps40n60k.pdf 

PD - 94384 SMPS MOSFET IRFPS40N60K HEXFET Power MOSFET Applications Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) 600V 0.110 40A Uninterruptible Power Supply High Speed Power Switching Motor Drive Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness SUPER TO-

 9.12. Size:173K  international rectifier
 irfps3810pbf.pdf 

PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 100V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.009 l Fast Switching G l Fully Avalanche Rated ID = 170A l Lead-Free S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve e

 9.13. Size:115K  international rectifier
 irfps37n50a.pdf 

PD- 91822C SMPS MOSFET IRFPS37N50A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 0.13 36A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curre

 9.14. Size:173K  international rectifier
 irfps40n50lpbf.pdf 

PD- 95141 IRFPS40N50LPbF SMPS MOSFET HEXFET Power MOSFET Applications Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies 500V 170ns 46A 0.087 Uninterruptible Power Supplies Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications

 9.15. Size:111K  international rectifier
 irfps40n50l.pdf 

PD- 93923B SMPS MOSFET IRFPS40N50L Applications HEXFET Power MOSFET Switch Mode Power Supply (SMPS) UninterruptIble Power Supply VDSS RDS(on) typ. ID High Speed Power Switching 500V 0.087 46A ZVS and High Frequency Circuit PWM Inverters Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Character

 9.16. Size:167K  international rectifier
 irfps38n60l.pdf 

PD - 94630 SMPS MOSFET IRFPS38N60L Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 120m 170ns 38A Motor Control applications Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate c

 9.17. Size:123K  international rectifier
 irfps35n50l.pdf 

PD- 94227 IRFPS35N50L SMPS MOSFET Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply VDSS RDS(on) typ. ID l High Speed Power Switching 500V 0.125 34A l ZVS and High Frequency Circuit l PWM Inverters Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness l Fully Ch

 9.18. Size:131K  international rectifier
 irfps3815pbf.pdf 

PD - 95896 IRFPS3815PbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 150V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.015 l Fast Switching G l Fully Avalanche Rated ID = 105A l Lead-Free S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr

 9.19. Size:158K  international rectifier
 irfps30n60kpbf.pdf 

PD- 95906 SMPS MOSFET IRFPS30N60KPbF HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 600V 160m 30A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Super-

 9.20. Size:185K  vishay
 irfps38n60l sihfps38n60l.pdf 

IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.12 RoHS* Lower Gate Charge Results in Simple Drive COMPLIANT Qg (Max.) (nC) 320 Requirements Qgs (nC) 85 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 9.21. Size:171K  vishay
 irfps43n50k irfps43n50kpbf sihfps43n50k.pdf 

IRFPS43N50K, SiHFPS43N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.078 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 350 COMPLIANT Ruggedness Qgs (nC) 85 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 180 and Current

 9.22. Size:187K  vishay
 irfps40n50l irfps40n50lpbf sihfps40n50l.pdf 

IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications Available RDS(on) ( )VGS = 10 V 0.087 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 380 COMPLIANT Requirements Qgs (nC) 80 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 9.23. Size:178K  vishay
 irfps40n60k sihfps40n60k.pdf 

IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.110 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 330 Ruggedness Qgs (nC) 84 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 150 and Current

 9.24. Size:185K  vishay
 irfps40n50l sihfps40n50l.pdf 

IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications Available RDS(on) ( )VGS = 10 V 0.087 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 380 COMPLIANT Requirements Qgs (nC) 80 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 9.25. Size:187K  vishay
 irfps38n60l irfps38n60lpbf sihfps38n60l.pdf 

IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.12 RoHS* Lower Gate Charge Results in Simple Drive COMPLIANT Qg (Max.) (nC) 320 Requirements Qgs (nC) 85 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 9.26. Size:129K  vishay
 irfps35n50lpbf.pdf 

IRFPS35N50L, SiHFPS35N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Super Fast Body Diode Eliminates the Need for VDS (V) 500 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.125 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 230 COMPLIANT Requirements Qgs (nC) 65 Enhanced dV/dt Capabilities Offer Improved Ruggedne

 9.27. Size:177K  vishay
 irfps37n50a sihfps37n50a.pdf 

IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (Max.) ( )VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 46 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 71 and Cur

 9.28. Size:170K  vishay
 irfps43n50k sihfps43n50k.pdf 

IRFPS43N50K, SiHFPS43N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.078 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 350 COMPLIANT Ruggedness Qgs (nC) 85 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 180 and Current

 9.29. Size:150K  vishay
 irfps40n50lpbf.pdf 

"IRFPS40N50LPBF" PD- 95141 IRFPS40N50LPbF SMPS MOSFET HEXFET Power MOSFET Applications Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies 500V 170ns 46A 0.087 Uninterruptible Power Supplies Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for ext

 9.30. Size:180K  vishay
 irfps40n60k irfps40n60kpbf sihfps40n60k.pdf 

IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.110 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 330 Ruggedness Qgs (nC) 84 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 150 and Current

 9.31. Size:132K  vishay
 irfps30n60kpbf.pdf 

IRFPS30N60K, SiHFPS30N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) ( )VGS = 10 V 0.16 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 220 COMPLIANT Ruggedness Qgs (nC) 64 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 110 and Current

 9.32. Size:176K  infineon
 irfps37n50a sihfps37n50a.pdf 

IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (Max.) ( )VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 46 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 71 and Cur

 9.33. Size:310K  inchange semiconductor
 irfps37n50a.pdf 

isc N-Channel MOSFET Transistor IRFPS37N50A FEATURES Drain Current I = 36A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.13 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.