IRFPS30N60KPBF - описание и поиск аналогов

 ..1. Size:158K  international rectifier
 irfps30n60kpbf.pdf 

PD- 95906 SMPS MOSFET IRFPS30N60KPbF HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 600V 160m 30A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Super-

 ..2. Size:132K  vishay
 irfps30n60kpbf.pdf 

IRFPS30N60K, SiHFPS30N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) ( )VGS = 10 V 0.16 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 220 COMPLIANT Ruggedness Qgs (nC) 64 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 110 and Current

 3.1. Size:121K  international rectifier
 irfps30n60k.pdf 

PD- 94417 IRFPS30N60K SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 600V 160m 30A l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Super-247 Avalanch

 8.1. Size:101K  international rectifier
 irfps3815.pdf 

PD - 93911 IRFPS3815 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 150V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.015 Fast Switching G Fully Avalanche Rated ID = 105A S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc

 8.2. Size:153K  international rectifier
 irfps37n50apbf.pdf 

PD- 95142 IRFPS37N50APbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 500V 0.13 36A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalan

 8.3. Size:115K  international rectifier
 irfps3810.pdf 

PD - 93912B IRFPS3810 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.009 Fast Switching G Fully Avalanche Rated ID = 170A S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resista

 8.4. Size:174K  international rectifier
 irfps35n50lpbf.pdf 

PD- 95140 IRFPS35N50LPbF SMPS MOSFET HEXFET Power MOSFET Applications Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies 500V 0.125 170ns 34A Uninterruptible Power Supplies Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications.

 8.5. Size:173K  international rectifier
 irfps3810pbf.pdf 

PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 100V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.009 l Fast Switching G l Fully Avalanche Rated ID = 170A l Lead-Free S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve e

 8.6. Size:115K  international rectifier
 irfps37n50a.pdf 

PD- 91822C SMPS MOSFET IRFPS37N50A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 0.13 36A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curre

 8.7. Size:167K  international rectifier
 irfps38n60l.pdf 

PD - 94630 SMPS MOSFET IRFPS38N60L Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 120m 170ns 38A Motor Control applications Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate c

 8.8. Size:123K  international rectifier
 irfps35n50l.pdf 

PD- 94227 IRFPS35N50L SMPS MOSFET Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply VDSS RDS(on) typ. ID l High Speed Power Switching 500V 0.125 34A l ZVS and High Frequency Circuit l PWM Inverters Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness l Fully Ch

 8.9. Size:131K  international rectifier
 irfps3815pbf.pdf 

PD - 95896 IRFPS3815PbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 150V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.015 l Fast Switching G l Fully Avalanche Rated ID = 105A l Lead-Free S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr

 8.10. Size:185K  vishay
 irfps38n60l sihfps38n60l.pdf 

IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.12 RoHS* Lower Gate Charge Results in Simple Drive COMPLIANT Qg (Max.) (nC) 320 Requirements Qgs (nC) 85 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 8.11. Size:187K  vishay
 irfps38n60l irfps38n60lpbf sihfps38n60l.pdf 

IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.12 RoHS* Lower Gate Charge Results in Simple Drive COMPLIANT Qg (Max.) (nC) 320 Requirements Qgs (nC) 85 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 8.12. Size:129K  vishay
 irfps35n50lpbf.pdf 

IRFPS35N50L, SiHFPS35N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Super Fast Body Diode Eliminates the Need for VDS (V) 500 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.125 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 230 COMPLIANT Requirements Qgs (nC) 65 Enhanced dV/dt Capabilities Offer Improved Ruggedne

 8.13. Size:177K  vishay
 irfps37n50a sihfps37n50a.pdf 

IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (Max.) ( )VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 46 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 71 and Cur

 8.14. Size:176K  infineon
 irfps37n50a sihfps37n50a.pdf 

IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (Max.) ( )VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 46 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 71 and Cur

 8.15. Size:310K  inchange semiconductor
 irfps37n50a.pdf 

isc N-Channel MOSFET Transistor IRFPS37N50A FEATURES Drain Current I = 36A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.13 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.