IRFPS38N60LPBF. Аналоги и основные параметры

Наименование производителя: IRFPS38N60LPBF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 540 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 38 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 130 ns

Cossⓘ - Выходная емкость: 740 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.15 Ohm

Тип корпуса: TO-274AA

Аналог (замена) для IRFPS38N60LPBF

- подборⓘ MOSFET транзистора по параметрам

 

IRFPS38N60LPBF даташит

 ..1. Size:187K  vishay
 irfps38n60l irfps38n60lpbf sihfps38n60l.pdf pdf_icon

IRFPS38N60LPBF

IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.12 RoHS* Lower Gate Charge Results in Simple Drive COMPLIANT Qg (Max.) (nC) 320 Requirements Qgs (nC) 85 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 3.1. Size:167K  international rectifier
 irfps38n60l.pdf pdf_icon

IRFPS38N60LPBF

PD - 94630 SMPS MOSFET IRFPS38N60L Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 120m 170ns 38A Motor Control applications Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate c

 3.2. Size:185K  vishay
 irfps38n60l sihfps38n60l.pdf pdf_icon

IRFPS38N60LPBF

IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.12 RoHS* Lower Gate Charge Results in Simple Drive COMPLIANT Qg (Max.) (nC) 320 Requirements Qgs (nC) 85 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 7.1. Size:101K  international rectifier
 irfps3815.pdf pdf_icon

IRFPS38N60LPBF

PD - 93911 IRFPS3815 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 150V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.015 Fast Switching G Fully Avalanche Rated ID = 105A S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... IRFPG52, IRFPS29N60LPBF, IRFPS30N60KPBF, IRFPS35N50LPBF, IRFPS37N50APBF, IRFPS3810PBF, IRFPS3815PBF, IRFPS38N60L, AON6380, IRFPS40N50L, IRFPS40N50LPBF, IRFPS40N60K, IRFPS40N60KPBF, IRFPS43N50K, IRFPS43N50KPBF, IRFRC20PBF, IRFR15N20DPBF