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IRFPS40N50LPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFPS40N50LPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 540 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 46 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 170 ns
   Cossⓘ - Выходная емкость: 960 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: TO-274AA

 Аналог (замена) для IRFPS40N50LPBF

 

 

IRFPS40N50LPBF Datasheet (PDF)

 ..1. Size:173K  international rectifier
irfps40n50lpbf.pdf

IRFPS40N50LPBF
IRFPS40N50LPBF

PD- 95141IRFPS40N50LPbFSMPS MOSFETHEXFET Power MOSFETApplications Zero Voltage Switching SMPS Trr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies500V 170ns 46A0.087 Uninterruptible Power Supplies Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications

 ..2. Size:187K  vishay
irfps40n50l irfps40n50lpbf sihfps40n50l.pdf

IRFPS40N50LPBF
IRFPS40N50LPBF

IRFPS40N50L, SiHFPS40N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.087RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 380COMPLIANTRequirementsQgs (nC) 80 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 ..3. Size:150K  vishay
irfps40n50lpbf.pdf

IRFPS40N50LPBF
IRFPS40N50LPBF

"IRFPS40N50LPBF"PD- 95141IRFPS40N50LPbFSMPS MOSFETHEXFET Power MOSFETApplications Zero Voltage Switching SMPS Trr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies500V 170ns 46A0.087 Uninterruptible Power Supplies Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for ext

 3.1. Size:111K  international rectifier
irfps40n50l.pdf

IRFPS40N50LPBF
IRFPS40N50LPBF

PD- 93923BSMPS MOSFETIRFPS40N50LApplicationsHEXFET Power MOSFET Switch Mode Power Supply (SMPS) UninterruptIble Power Supply VDSS RDS(on) typ. ID High Speed Power Switching500V 0.087 46A ZVS and High Frequency Circuit PWM InvertersBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dtRuggedness Fully Character

 3.2. Size:185K  vishay
irfps40n50l sihfps40n50l.pdf

IRFPS40N50LPBF
IRFPS40N50LPBF

IRFPS40N50L, SiHFPS40N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.087RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 380COMPLIANTRequirementsQgs (nC) 80 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 6.1. Size:196K  international rectifier
irfps40n60kpbf.pdf

IRFPS40N50LPBF
IRFPS40N50LPBF

PD - 95702SMPS MOSFETIRFPS40N60KPbFHEXFET Power MOSFETApplicationsl Hard Switching Primary or PFC SwitchVDSS RDS(on) typ. IDl Switch Mode Power Supply (SMPS)600V 0.110 40Al Uninterruptible Power Supplyl High Speed Power Switchingl Motor Drivel Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/

 6.2. Size:107K  international rectifier
irfps40n60k.pdf

IRFPS40N50LPBF
IRFPS40N50LPBF

PD - 94384SMPS MOSFETIRFPS40N60KHEXFET Power MOSFETApplications Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS)600V 0.110 40A Uninterruptible Power Supply High Speed Power Switching Motor DriveBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt RuggednessSUPER TO-

 6.3. Size:178K  vishay
irfps40n60k sihfps40n60k.pdf

IRFPS40N50LPBF
IRFPS40N50LPBF

IRFPS40N60K, SiHFPS40N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.110RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 330RuggednessQgs (nC) 84 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 150and Current

 6.4. Size:180K  vishay
irfps40n60k irfps40n60kpbf sihfps40n60k.pdf

IRFPS40N50LPBF
IRFPS40N50LPBF

IRFPS40N60K, SiHFPS40N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.110RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 330RuggednessQgs (nC) 84 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 150and Current

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