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ZVN4525E6TA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ZVN4525E6TA
   Маркировка: N52
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 1.1 W
   Предельно допустимое напряжение сток-исток |Uds|: 250 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 40 V
   Пороговое напряжение включения |Ugs(th)|: 1.8 V
   Максимально допустимый постоянный ток стока |Id|: 0.23 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 2.6 nC
   Время нарастания (tr): 1.7 ns
   Выходная емкость (Cd): 11 pf
   Сопротивление сток-исток открытого транзистора (Rds): 8.5 Ohm
   Тип корпуса: SOT23-6

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ZVN4525E6TA Datasheet (PDF)

 ..1. Size:430K  diodes
 zvn4525e6ta zvn4525e6tc.pdf

ZVN4525E6TA ZVN4525E6TA

ZVN4525E6250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT23-6impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and gener

 5.1. Size:431K  diodes
 zvn4525e6.pdf

ZVN4525E6TA ZVN4525E6TA

ZVN4525E6250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT23-6impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and gener

 7.1. Size:414K  diodes
 zvn4525g.pdf

ZVN4525E6TA ZVN4525E6TA

ZVN4525G250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT223impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and general

 7.2. Size:412K  diodes
 zvn4525gta zvn4525gtc.pdf

ZVN4525E6TA ZVN4525E6TA

ZVN4525G250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT223impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and general

 7.3. Size:437K  diodes
 zvn4525z.pdf

ZVN4525E6TA ZVN4525E6TA

ZVN4525Z250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT89impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and general

 7.4. Size:435K  diodes
 zvn4525zta.pdf

ZVN4525E6TA ZVN4525E6TA

ZVN4525Z250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT89impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and general

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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