ZXM61P02FTA datasheet, аналоги, основные параметры

Наименование производителя: ZXM61P02FTA  📄📄 

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.625 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.9 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6.7 ns

Cossⓘ - Выходная емкость: 70 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm

Тип корпуса: SOT-23

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Аналог (замена) для ZXM61P02FTA

- подборⓘ MOSFET транзистора по параметрам

 

ZXM61P02FTA даташит

 ..1. Size:442K  diodes
zxm61p02fta zxm61p02ftc.pdfpdf_icon

ZXM61P02FTA

A Product Line of Diodes Incorporated ZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID Low on-resistance V(BR)DSS RDS(on) TA = 25 C Low threshold Low gate drive 600m @ VGS = -4.5V -0.92A Lead Free , RoHS Compliant (Note 1) -20V 900m @ VGS = -2.7V -0.75A Halogen and Antimo

 4.1. Size:907K  cn vbsemi
zxm61p02ftc.pdfpdf_icon

ZXM61P02FTA

ZXM61P02FTC www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICAT

 5.1. Size:198K  diodes
zxm61p02f.pdfpdf_icon

ZXM61P02FTA

ZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-20V; R =0.60 ; I =-0.9A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES Low on-r

 5.2. Size:224K  tysemi
zxm61p02f.pdfpdf_icon

ZXM61P02FTA

Product specification ZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID Low on-resistance V(BR)DSS RDS(on) TA = 25 C Low threshold Low gate drive 600m @ VGS = -4.5V -0.92A Lead Free , RoHS Compliant (Note 1) -20V 900m @ VGS = -2.7V -0.75A Halogen and Antimony Free. "Green"

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