ZXM61P02FTC - аналоги и даташиты транзистора

 

ZXM61P02FTC - Даташиты. Аналоги. Основные параметры


   Наименование производителя: ZXM61P02FTC
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.625 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 0.9 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 6.7 ns
   Cossⓘ - Выходная емкость: 70 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
   Тип корпуса: SOT-23

 Аналог (замена) для ZXM61P02FTC

 

ZXM61P02FTC Datasheet (PDF)

 ..1. Size:442K  diodes
zxm61p02fta zxm61p02ftc.pdfpdf_icon

ZXM61P02FTC

A Product Line of Diodes Incorporated ZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID Low on-resistance V(BR)DSS RDS(on) TA = 25 C Low threshold Low gate drive 600m @ VGS = -4.5V -0.92A Lead Free , RoHS Compliant (Note 1) -20V 900m @ VGS = -2.7V -0.75A Halogen and Antimo

 ..2. Size:907K  cn vbsemi
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ZXM61P02FTC

ZXM61P02FTC www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICAT

 5.1. Size:198K  diodes
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ZXM61P02FTC

ZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-20V; R =0.60 ; I =-0.9A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES Low on-r

 5.2. Size:224K  tysemi
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ZXM61P02FTC

Product specification ZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID Low on-resistance V(BR)DSS RDS(on) TA = 25 C Low threshold Low gate drive 600m @ VGS = -4.5V -0.92A Lead Free , RoHS Compliant (Note 1) -20V 900m @ VGS = -2.7V -0.75A Halogen and Antimony Free. "Green"

Другие MOSFET... ZVP4525ZTA , ZXM41N10FTA , ZXM41N10FTC , ZXM61N02FTA , ZXM61N02FTC , ZXM61N03FTA , ZXM61N03FTC , ZXM61P02FTA , IRF540 , ZXM61P03FTA , ZXM61P03FTC , ZXM62N02E6TA , ZXM62N03E6TA , ZXM62N03GTA , ZXM62P02E6TA , ZXM62P03E6TA , ZXM62P03GTA .

History: SSM2312GN | NTP18N06

 

 
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