ZXM62P02E6TA datasheet, аналоги, основные параметры

Наименование производителя: ZXM62P02E6TA  📄📄 

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.1 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.3 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 15.4 ns

Cossⓘ - Выходная емкость: 150 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm

Тип корпуса: SOT-23-6

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Аналог (замена) для ZXM62P02E6TA

- подборⓘ MOSFET транзистора по параметрам

 

ZXM62P02E6TA даташит

 ..1. Size:176K  zetex
 zxm62p02e6ta.pdf pdf_icon

ZXM62P02E6TA

ZXM62P02E6 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-20V; R =0.20 ; I =-2.3A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low o

 4.1. Size:178K  diodes
 zxm62p02e6.pdf pdf_icon

ZXM62P02E6TA

ZXM62P02E6 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-20V; R =0.20 ; I =-2.3A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low o

 7.1. Size:281K  diodes
 zxm62p03e6.pdf pdf_icon

ZXM62P02E6TA

ZXM62P03E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.15 ID=-2.6A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance

 7.2. Size:286K  zetex
 zxm62p03gta.pdf pdf_icon

ZXM62P02E6TA

ZXM62P03G 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V RDS(on) = 0.15 ID = -4.0A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES Low on-resistance

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