ZXM64P035GTA datasheet, аналоги, основные параметры

Наименование производителя: ZXM64P035GTA  📄📄 

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 35 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.3 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6.2 ns

Cossⓘ - Выходная емкость: 250 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm

Тип корпуса: SOT-223

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Аналог (замена) для ZXM64P035GTA

- подборⓘ MOSFET транзистора по параметрам

 

ZXM64P035GTA даташит

 ..1. Size:100K  zetex
 zxm64p035gta.pdf pdf_icon

ZXM64P035GTA

ZXM64P035G 35V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -35V RDS(on) = 0.075 ID = -5.3A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on

 5.1. Size:106K  diodes
 zxm64p035l3.pdf pdf_icon

ZXM64P035GTA

ZXM64P035L3 35V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -35V RDS(on) = 0.075 ID = -12A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on

 6.1. Size:333K  diodes
 zxm64p03x.pdf pdf_icon

ZXM64P035GTA

ZXM64P03X 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.075 ID=-3.8A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance MSOP

 6.2. Size:331K  zetex
 zxm64p03xta.pdf pdf_icon

ZXM64P035GTA

ZXM64P03X 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.075 ID=-3.8A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance MSOP

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