Справочник MOSFET. ZXM64P035GTA

 

ZXM64P035GTA Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXM64P035GTA
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 35 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 5.3 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 6.2 ns
   Cossⓘ - Выходная емкость: 250 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm
   Тип корпуса: SOT-223
 

 Аналог (замена) для ZXM64P035GTA

   - подбор ⓘ MOSFET транзистора по параметрам

 

ZXM64P035GTA Datasheet (PDF)

 ..1. Size:100K  zetex
 zxm64p035gta.pdf pdf_icon

ZXM64P035GTA

ZXM64P035G35V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -35V: RDS(on) = 0.075 : ID = -5.3ADESCRIPTIONThis new generation of high cell density planar MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURES Low on

 5.1. Size:106K  diodes
 zxm64p035l3.pdf pdf_icon

ZXM64P035GTA

ZXM64P035L335V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -35V: RDS(on) = 0.075 : ID = -12ADESCRIPTIONThis new generation of high cell density planar MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURES Low on

 6.1. Size:333K  diodes
 zxm64p03x.pdf pdf_icon

ZXM64P035GTA

ZXM64P03X30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.075 ID=-3.8ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistanceMSOP

 6.2. Size:331K  zetex
 zxm64p03xta.pdf pdf_icon

ZXM64P035GTA

ZXM64P03X30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.075 ID=-3.8ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistanceMSOP

ПОКАЗАТЬ ЕЩЁ

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History: SIHLZ24S | ZXM66P03N8TA

 

 
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